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M36LLR8860T1ZAQT

STMicroelectronics

M36LLR8860T1ZAQT by STMicroelectronics

M36LLR8860T1ZAQT by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,257 parts In-Stock

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3,257

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Vyrian

USA . 1,302 parts In-Stock

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1,302

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Anansix

USA . 803 parts In-Stock

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803

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,264 parts In-Stock

1+ parts

$4.410

100+ parts

-

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$3.969

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1,264

$4.410

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$3.969

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MKK Technologies

India . 569 parts In-Stock

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$8.292

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569

$8.292

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DigiPath Technology Company

USA . 569 parts In-Stock

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$8.292

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569

$8.292

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Corphita

USA . 3,766 parts In-Stock

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Parana Technologies

USA . 1,058 parts In-Stock

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$5.272

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1,058

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$5.272

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Overview

Unlock the potential of your next project with the M36LLR8860T1ZAQT memory IC from STMicroelectronics. Renowned for their cutting-edge technology and reliability, STMicroelectronics delivers unparalleled quality and performance. This innovative dual-memory solution combines Flash and PSRAM in a compact package, ideal for applications ranging from smart devices to automotive systems. Experience fast data processing, low power consumption, and enhanced efficiency that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliability and longevity of the memory IC.

Surface Mount: YES

Enables compact design and easy integration into modern electronic circuits.

Package Shape: RECTANGULAR

Optimizes space within devices, making it suitable for a variety of applications.

Operating Mode: SYNCHRONOUS

Enables faster data access and improved performance for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

Combines the benefits of both memory types, offering flexibility in data storage and execution.

Nominal Supply Voltage / Vsup: 1.8 V

Low voltage operation improves power efficiency, making it ideal for battery-powered devices.

Power Supplies (V): 1.8

Reduces overall power consumption while maintaining stable performance.

No. of Terminals: 88

Provides ample connectivity options, enhancing versatility for various designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Ensures a compact footprint, suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

Allows operation in a wide temperature range, making it reliable in demanding environments.

Organization: 16MX16

Provides a balanced data organization that supports high-performance applications.

Minimum Operating Temperature: -25 °C

Operational in extreme conditions, thus offering versatility for various applications.

Terminal Finish: TIN LEAD

Ensures robust soldering and connection reliability during manufacturing and operation.

Terminal Position: BOTTOM

Facilitates efficient circuit board design, improving layout and performance.

Maximum Seated Height: 1.4 mm

Low-profile design minimizes space usage, ideal for slim devices.

Width: 8 mm

Compact size facilitates versatility in various PCB layouts.

Minimum Supply Voltage (Vsup): 1.7 V

Allows operation with lower voltage supplies, enhancing compatibility with modern low-power designs.

Length: 10 mm

Space-efficient dimensions make it suitable for various applications without compromising performance.

Technology: CMOS

Ensures low power consumption and high noise immunity, enhancing performance in digital applications.

Terminal Form: BALL

Ball grid array provides better thermal and electrical performance compared to conventional packages.

Maximum Supply Current: 52 mA

Offers a balance between power consumption and performance for sustained operation.

No. of Words: 16777216 words

High memory capacity, suitable for applications requiring extensive data storage.

Memory Width: 16

Wide data bus enables efficient data transfer rates, enhancing overall system performance.

Terminal Pitch: 0.8 mm

Fine pitch allows for high-density circuit designs, improving space utilization.

No. of Words Code: 16M

Indicates a significant data capacity, making it feasible for high-demand applications.

Maximum Supply Voltage (Vsup): 1.95 V

Supports higher voltage levels, allowing for improved performance in demanding applications.

Memory Density: 268435456 bit

High density enhances data storage capabilities, essential for complex applications.

Memory IC Type: MEMORY CIRCUIT

Versatile design allows it to serve multiple memory functions, making it ideal for diverse applications.

Maximum Standby Current: 0.00011 Amp

Extremely low standby current supports energy-efficient designs, prolonging battery life in portable devices.

Technical Specifications

Other Function Memory ICs M36LLR8860T1ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860T1ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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