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M36LLR8860D1ZAQT

STMicroelectronics

M36LLR8860D1ZAQT by STMicroelectronics

M36LLR8860D1ZAQT by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M x 16 organization with mixed FLASH+PSRAM technology. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,467 parts In-Stock

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4,467

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Digiode

USA . 2,475 parts In-Stock

1+ parts

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2,475

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Anansix

USA . 1,272 parts In-Stock

1+ parts

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1,272

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 482 parts In-Stock

1+ parts

$2.213

100+ parts

-

1k+ parts

$1.991

10k+ parts

-

482

$2.213

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$1.991

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MKK Technologies

India . 1,601 parts In-Stock

1+ parts

$4.161

100+ parts

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1,601

$4.161

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DigiPath Technology Company

USA . 1,601 parts In-Stock

1+ parts

$4.161

100+ parts

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1,601

$4.161

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Corphita

USA . 1,611 parts In-Stock

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1,611

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Parana Technologies

USA . 570 parts In-Stock

1+ parts

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$2.646

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570

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$2.646

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Overview

Unlock unparalleled performance with the M36LLR8860D1ZAQT from STMicroelectronics, a trusted leader in innovation. This advanced memory IC seamlessly combines FLASH and PSRAM technologies, ensuring optimal efficiency and reliability for diverse applications. With its low power consumption and compact design, it’s perfect for cutting-edge devices that demand high-speed data processing. Elevate your projects with a solution that guarantees quality, versatility, and exceptional value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures resilience and protection against environmental factors, enhancing product longevity.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern electronic applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, allowing for efficient layout and design.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer efficiency and speed, making it suitable for high-performance applications.

Mixed Memory Type: FLASH+PSRAM

A combination of flash and PSRAM provides both non-volatile memory and high-speed access, making it versatile for various applications.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low supply voltage of 1.8 V reduces power consumption, making it energy-efficient for battery-operated devices.

Power Supplies (V): 1.8 V

Supports powering from a low voltage, which helps in extending battery life in portable applications.

No. of Terminals: 88

A high number of terminals enables greater connectivity and functionality, supporting complex integrated circuits.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array design allows for a low profile, saving space while ensuring high pin density for enhanced performance.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature makes it suitable for use in harsh environments and applications requiring robust thermal performance.

Organization: 16MX16

Offers a large organizational structure, which is beneficial for applications requiring extensive data storage.

Minimum Operating Temperature: -25 °C

Withstand lower temperatures, making it suitable for operation in cold environments or outdoor applications.

Terminal Finish: TIN LEAD

The tin-lead finish provides good conductivity and reliability in solder joints, ensuring stable connections.

Terminal Position: BOTTOM

Bottom terminal positioning promotes better thermal management and signal integrity on PCB layouts.

Maximum Seated Height: 1.4 mm

A low maximum seated height allows for increased design flexibility in compact electronic devices.

Width: 8 mm

A narrow width facilitates more efficient use of PCB space, allowing for designs that accommodate more components.

Minimum Supply Voltage (Vsup): 1.7 V

Operates effectively at a lower supply voltage, enhancing versatility in diverse applications.

Length: 10 mm

Compact length supports high-density circuit board designs, crucial for modern, space-constrained applications.

Technology: CMOS

CMOS technology provides low power consumption, making it ideal for battery-powered devices while maintaining high performance.

Terminal Form: BALL

Ball terminal form factors enhance connection stability and thermal performance in surface mount applications.

Maximum Supply Current: 52 mA

Reasonable current requirements allow for efficient power management in various applications.

No. of Words: 16777216 words

Provides substantial memory capacity for applications requiring significant data storage and retrieval.

Memory Width: 16

A 16-bit memory width supports efficient data processing, enabling quick read/write operations.

Terminal Pitch: 0.8 mm

A 0.8 mm pitch allows for higher density mounting, fitting more connections in smaller areas.

No. of Words Code: 16M

Robust memory addressing capability provides flexibility for complex applications involving multiple data operations.

Maximum Supply Voltage (Vsup): 1.95 V

Flexibility with maximum supply voltage enhances compatibility with various circuit designs.

Memory Density: 268435456 bit

High memory density supports advanced applications such as high-resolution graphics and complex processing tasks.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory IC, it specializes in storage tasks, providing reliable performance for various electronic applications.

Maximum Standby Current: 0.00011 Amp

Extremely low standby current improves energy efficiency, making it suitable for battery-powered and energy-sensitive applications.

Technical Specifications

Other Function Memory ICs M36LLR8860D1ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860D1ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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