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MT29C8G96MAZBADKD-5WT

Micron Technology

MT29C8G96MAZBADKD-5WT by Micron Technology

MT29C8G96MAZBADKD-5WT by Micron Technology is a 64MX32 memory IC with 67108864 words and 2147483648 bit memory density. Operating at 1.7-1.95V, it has a synchronous mode and thin profile grid array package shape. Ideal for applications requiring high-speed data processing in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 15,100 parts In-Stock

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Vyrian

USA . 6,061 parts In-Stock

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6,061

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Digiode

USA . 799 parts In-Stock

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799

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Cyclops Electronics Ltd

UK . 187 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,612 parts In-Stock

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$3.000

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$3.000

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AZTECH Wire

Italy . 652 parts In-Stock

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$19.748

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652

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A-Z Elektronik GmbH

Germany . 7,455 parts In-Stock

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7,455

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Perfect Parts

USA . 5,432 parts In-Stock

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Argo Parts USA

USA . 3,947 parts In-Stock

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RC Electronics

USA . 1,065 parts In-Stock

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Continental Prestige Electronics

USA . 987 parts In-Stock

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Corphita

USA . 814 parts In-Stock

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Microchip USA

USA . 195 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Enhance your electronic devices with the MT29C8G96MAZBADKD-5WT by Micron Technology. Known for their superior quality and cutting-edge technology, Micron Technology delivers innovative solutions in the field of memory ICs. This versatile product offers seamless integration, optimal performance, and reliable functionality for a wide range of applications. Elevate your projects with the value, benefits, and advantages that only Micron Technology can provide. Upgrade to the MT29C8G96MAZBADKD-5WT today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product durable and cost-effective.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient PCB layout and optimization of space.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and synchronized data transfers, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 1.8V

With a low supply voltage of 1.8V, this product offers energy efficiency and reduced power consumption.

No. of Terminals: 137

The high number of terminals enables versatile connectivity options and compatibility with various systems.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style enhances signal integrity and reliability.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand harsh environmental conditions.

Organization: 64MX32

The organization of 64MX32 provides ample memory storage capacity for demanding applications.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25°C ensures reliable operation even in extreme cold environments.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB design and facilitates easier rework and maintenance.

Maximum Seated Height: 1.1 mm

The low maximum seated height of 1.1mm allows for slim and compact device designs.

Width: 10.5 mm

The width of 10.5mm offers flexibility in PCB layout and space-constrained applications.

Minimum Supply Voltage (Vsup): 1.7V

The minimum supply voltage of 1.7V ensures compatibility with a wide range of power sources.

Length: 13 mm

The length of 13mm provides a balance between compact design and functional performance.

Technology: CMOS

The CMOS technology used in this product allows for low power consumption and high-speed operation.

Terminal Form: BALL

The ball terminal form provides reliable electrical connections and ease of soldering during assembly.

No. of Words: 67108864 words

The large number of words available ensures extensive memory storage capacity for data-intensive applications.

Memory Width: 32

With a memory width of 32 bits, this product offers efficient data transfer and processing capabilities.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8mm allows for high-density mounting and increased interconnection density.

No. of Words Code: 64M

The 64M words code indicates a high level of memory capacity suitable for demanding memory-intensive tasks.

Maximum Supply Voltage (Vsup): 1.95V

The maximum supply voltage of 1.95V provides flexibility in power supply options for enhanced performance.

Memory Density: 2147483648 bit

The high memory density of 2147483648 bits ensures ample storage space for extensive data storage requirements.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit IC, this product offers reliable and efficient memory storage solutions for various applications.

Technical Specifications

Other Function Memory ICs MT29C8G96MAZBADKD-5WT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

Additional Features:

ALSO ORGANISED AS 128M X 16

JESD-30 Code:

R-PBGA-B137

Length:

13 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Terminals:

137

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

64MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.5 mm

Trade Compliance

MT29C8G96MAZBADKD-5WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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