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MT29C4G48MAYBBAKS-48IT

Micron Technology

MT29C4G48MAYBBAKS-48IT by Micron Technology

Micron Technology's MT29C4G48MAYBBAKS-48IT is a 512MX8 memory IC with 4294967296-bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Suitable for industrial applications, this very thin profile chip has a max temp of 85°C and terminal pitch of 0.8mm.

Median Price

$16.600

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 823 parts In-Stock

1+ parts

$14.770

100+ parts

$12.260

1k+ parts

$11.960

10k+ parts

-

823

$14.770

$12.260

$11.960

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DigiKey

USA . 1,140 parts In-Stock

1+ parts

$18.430

100+ parts

$15.757

1k+ parts

$14.852

10k+ parts

-

1,140

$18.430

$15.757

$14.852

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,833 parts In-Stock

1+ parts

$14.592

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1,833

$14.592

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Vyrian

USA . 1,960 parts In-Stock

1+ parts

$15.360

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1,960

$15.360

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 4,212 parts In-Stock

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4,212

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 665 parts In-Stock

1+ parts

$13.060

100+ parts

-

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665

$13.060

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Corphita

USA . 1,345 parts In-Stock

1+ parts

$13.824

100+ parts

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1,345

$13.824

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Argo Parts USA

USA . 5,987 parts In-Stock

1+ parts

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5,987

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,271 parts In-Stock

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4,271

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A-Z Elektronik GmbH

Germany . 2,768 parts In-Stock

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2,768

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Microchip USA

USA . 1,315 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Discover the unparalleled quality and reliability of Micron Technology's MT29C4G48MAYBBAKS-48IT, a cutting-edge memory circuit that offers exceptional performance and efficiency. Ideal for a variety of applications, this innovative product boasts a sleek rectangular design and operates in synchronous mode, making it a versatile solution for your technological needs. With a nominal supply voltage of 1.8V and industrial-grade temperature tolerance, this memory IC delivers value and benefits that exceed expectations. Elevate your projects with Micron Technology's MT29C4G48MAYBBAKS-48IT and experience the advantages of superior craftsmanship and advanced technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and heat resistance, ensuring reliable performance in various environments.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and effort.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfer and processing in synchronization, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard supply voltage of 1.8V, providing consistent power delivery for stable performance.

No. of Terminals: 137

With 137 terminals, this memory IC offers a high level of connectivity and flexibility for integration into various systems.

Maximum Operating Temperature: 85 °C

Can operate at high temperatures up to 85°C, making it suitable for industrial applications that require reliability in harsh conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, making it energy-efficient and fast.

Technical Specifications

Other Function Memory ICs MT29C4G48MAYBBAKS-48IT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

Additional Features:

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

JESD-30 Code:

R-PBGA-B137

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

137

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.5 mm

Trade Compliance

MT29C4G48MAYBBAKS-48IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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