Loading...

MT29C4G96MAZAPCJG-5IT

Micron Technology

MT29C4G96MAZAPCJG-5IT by Micron Technology

Micron Technology's MT29C4G96MAZAPCJG-5IT is a 256MX16 memory IC with 4294967296 bit memory density. Operating at 1.8V, it features synchronous mode and industrial temperature grade. Suitable for applications requiring high memory capacity and fast data processing in compact devices.

Median Price

$12.300

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 850 parts In-Stock

1+ parts

$12.300

100+ parts

-

1k+ parts

-

10k+ parts

-

850

$12.300

-

-

-

Chip Stock

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Digiode

USA . 2,267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,267

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,505 parts In-Stock

1+ parts

$5.210

100+ parts

-

1k+ parts

$5.002

10k+ parts

$5.002

3,505

$5.210

-

$5.002

$5.002

Ampacity Inc.

Singapore . 332 parts In-Stock

1+ parts

$17.000

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$17.000

-

-

-

Continental Prestige Electronics

USA . 2,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,081

-

-

-

-

Corphita

USA . 1,991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,991

-

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Argo Parts USA

USA . 782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

782

-

-

-

-

Overview

Discover the unparalleled quality and reliability of Micron Technology's MT29C4G96MAZAPCJG-5IT Memory IC, perfect for a wide range of applications. With a sleek square package shape and very thin profile, this memory circuit offers seamless integration into your devices. Operated in synchronous mode with a nominal supply voltage of 1.8V, this industrial-grade IC boasts a memory density of 4294967296 bits. Trust in Micron Technology for cutting-edge technology that delivers superior performance and value. Elevate your products with the MT29C4G96MAZAPCJG-5IT and experience unrivaled innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the memory IC.

Surface Mount: YES

Allows for easy installation onto circuit boards, reducing assembly time and effort.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer, improving overall performance and efficiency of the memory IC.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for reliable and stable operation of the memory IC.

No. of Terminals: 168

Provides connectivity options for various interfaces, increasing compatibility with different systems.

Maximum Operating Temperature: 85 °C

Ensures reliable operation in a wide range of temperature conditions, suitable for industrial settings.

Organization: 256MX16

Large memory capacity organized in a 256MX16 configuration for efficient data storage and retrieval.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance, making it energy-efficient.

Memory Density: 4294967296 bit

High memory density enables storage of large amounts of data, suitable for demanding applications.

Technical Specifications

Other Function Memory ICs MT29C4G96MAZAPCJG-5IT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

JESD-30 Code:

S-PBGA-B168

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

168

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

12 mm

Trade Compliance

MT29C4G96MAZAPCJG-5IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19