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M38510/31901BFX

Texas Instruments

M38510/31901BFX by Texas Instruments

M38510/31901BFX by Texas Instruments is a 16-bit memory circuit IC with 4x4 organization. Operating in asynchronous mode at temperatures ranging from -55°C to 125°C, it has a supply voltage of 4.5V to 5.5V. Encased in a ceramic-metal sealed co-fired package, this flatpack IC is suitable for military-grade applications requiring reliable memory storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,748 parts In-Stock

1+ parts

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6,748

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Digiode

USA . 4,142 parts In-Stock

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4,142

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 329 parts In-Stock

1+ parts

$3.338

100+ parts

-

1k+ parts

$3.863

10k+ parts

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329

$3.338

-

$3.863

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DigiPath Technology Company

USA . 71 parts In-Stock

1+ parts

$3.676

100+ parts

$3.382

1k+ parts

-

10k+ parts

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71

$3.676

$3.382

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IDEA Electronic Components Group

UK . 2,079 parts In-Stock

1+ parts

$3.751

100+ parts

-

1k+ parts

$3.376

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2,079

$3.751

-

$3.376

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ChromeModa Solutions

Germany . 1,031 parts In-Stock

1+ parts

$3.751

100+ parts

$3.076

1k+ parts

-

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1,031

$3.751

$3.076

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AZTECH Wire

Italy . 428 parts In-Stock

1+ parts

$12.694

100+ parts

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428

$12.694

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One Stop Electronics

USA . 993 parts In-Stock

1+ parts

$28.000

100+ parts

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993

$28.000

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Corphita

USA . 1,766 parts In-Stock

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1,766

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Overview

Experience unparalleled quality and reliability with the M38510/31901BFX by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-notch performance and durability in all their products. This memory IC is perfect for a wide range of applications, offering seamless operation and efficiency. Trust in Texas Instruments to provide you with cutting-edge technology that delivers value, benefits, and advantages like no other. Elevate your projects with the M38510/31901BFX and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and protection for the memory IC, making it suitable for a variety of applications.

Surface Mount: YES

Being surface mountable makes this memory IC easy to install on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and efficient read/write operations without the need for strict timing requirements, enhancing the versatility of the memory IC.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of systems and provides stable power for reliable operation.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this memory IC can withstand high temperatures and harsh environmental conditions, ensuring dependable performance in demanding applications.

Memory Density: 16 bit

The 16-bit memory density offers ample storage capacity for data processing and retrieval, making this memory IC suitable for tasks that require handling a significant amount of information.

Technical Specifications

Other Function Memory ICs M38510/31901BFX attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-CDFP-F16

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Position:

DUAL

Trade Compliance

M38510/31901BFX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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