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M36W216TI70ZA1T

STMicroelectronics

M36W216TI70ZA1T by STMicroelectronics

M36W216TI70ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at 3V and supports a max access time of 70ns. Ideal for commercial applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,112 parts In-Stock

1+ parts

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3,112

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Anansix

USA . 2,165 parts In-Stock

1+ parts

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2,165

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Digiode

USA . 753 parts In-Stock

1+ parts

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753

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,288 parts In-Stock

1+ parts

$3.945

100+ parts

-

1k+ parts

$3.550

10k+ parts

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1,288

$3.945

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$3.550

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MKK Technologies

India . 1,612 parts In-Stock

1+ parts

$7.418

100+ parts

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1,612

$7.418

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DigiPath Technology Company

USA . 1,612 parts In-Stock

1+ parts

$7.418

100+ parts

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1,612

$7.418

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Corphita

USA . 4,485 parts In-Stock

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4,485

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Parana Technologies

USA . 6 parts In-Stock

1+ parts

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100+ parts

$4.717

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6

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$4.717

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Overview

Unlock unparalleled performance with the M36W216TI70ZA1T from STMicroelectronics. As a leader in innovative semiconductor solutions, STMicroelectronics combines cutting-edge technology with exceptional reliability, ensuring your applications run smoothly and efficiently. This versatile memory IC is perfect for high-performance devices, offering seamless operation across diverse environments while delivering significant cost benefits. Elevate your projects with the quality and durability of STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material provides durability and protects the internal components from environmental factors.

Surface Mount: YES

Surface mount technology facilitates compact design and enhances manufacturing efficiency through automated assembly.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on printed circuit boards, making it suitable for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances performance by allowing data access without the need for clock synchronization.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM provides both fast access speeds and non-volatile memory, making it ideal for diverse applications.

Nominal Supply Voltage / Vsup: 3 V

The nominal voltage of 3V ensures compatibility with a wide range of electronic systems and reduces power consumption.

Power Supplies: 3 V

Operating on a 3V power supply promotes energy efficiency and reduces the overall power requirements of the system.

No. of Terminals: 66

Having 66 terminals allows for a robust connection and supports complex functionality in memory operations.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch design of the grid array package enable high-density mounting and efficient thermal management.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in various environmental conditions, suitable for commercial applications.

Organization: 1MX16

The 1MX16 organization provides a balanced approach to memory architecture, facilitating efficient data handling and retrieval.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, the device ensures performance in a variety of temperature environments.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

The high-quality terminal finish enhances solderability and provides excellent reliability, minimizing corrosion and improving connection longevity.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better thermal dissipation and facilitates ease of installation in compact designs.

Maximum Seated Height: 1.4 mm

A low seated height promotes compact assembly, helping to reduce the overall profile of the PCB.

Width: 8 mm

A width of 8 mm aids in efficient PCB layout, allowing for more components to be placed within limited board space.

Minimum Supply Voltage (Vsup): 2.7 V

Supporting a minimum supply voltage of 2.7V expands its compatibility with a variety of devices, enhancing design versatility.

Length: 12 mm

The compact length of 12 mm is ideal for space-constrained applications, maximizing design flexibility.

Temperature Grade: COMMERCIAL

Rated for commercial temperature grade offers assurance of reliability for standard industrial and consumer applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, promoting overall efficiency in performance.

Terminal Form: BALL

Ball terminal form enhances electrical connectivity and simplifies the routing of signals within compact designs.

Maximum Supply Current: 20 mA

With a maximum supply current of 20 mA, the product ensures low power consumption while maintaining functionality.

No. of Words: 1048576 words

An impressive capacity of 1,048,576 words supports a wide range of applications, providing ample storage for data-intensive tasks.

Memory Width: 16

A memory width of 16 bits maximizes data throughput, enabling efficient processing for a variety of applications.

Terminal Pitch: 0.8 mm

0.8 mm terminal pitch allows for high-density connections while maintaining ease of routing traces on PCBs.

No. of Words Code: 1M

With a coding capability of 1M words, this memory IC is suitable for applications requiring significant data handling.

Maximum Supply Voltage (Vsup): 3.3 V

The maximum supply voltage of 3.3 V provides a flexible operational range, accommodating various devices and applications.

Memory Density: 16777216 bit

A memory density of 16,777,216 bits allows for large data storage in a compact form factor, ideal for modern applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it is tailored for efficient data storage and retrieval, essential for any electronic device.

Maximum Standby Current: 0.00001 Amp

A maximal standby current of only 0.00001 Amp reduces power consumption in idle state, enhancing overall energy efficiency.

Maximum Access Time: 70 ns

A maximum access time of 70 ns ensures fast data retrieval, critical for performance-intensive applications.

Technical Specifications

Other Function Memory ICs M36W216TI70ZA1T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216TI70ZA1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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