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TM4SR72EPH-10

Texas Instruments

TM4SR72EPH-10 by Texas Instruments

TM4SR72EPH-10 by Texas Instruments is a 3.3V memory IC with 4MX72 organization, 100 MHz clock frequency, and 301989888 bit memory density. It is used in applications requiring high-speed data processing and storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,538 parts In-Stock

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3,538

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Digiode

USA . 3,076 parts In-Stock

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3,076

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Distributors (Availability)

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Parana Technologies

USA . 1,408 parts In-Stock

1+ parts

$4.458

100+ parts

-

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$4.890

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1,408

$4.458

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$4.890

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DigiPath Technology Company

USA . 2,109 parts In-Stock

1+ parts

$4.909

100+ parts

$4.516

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2,109

$4.909

$4.516

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ChromeModa Solutions

Germany . 6,339 parts In-Stock

1+ parts

$5.009

100+ parts

$4.107

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6,339

$5.009

$4.107

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IDEA Electronic Components Group

UK . 2,267 parts In-Stock

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$5.009

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$4.508

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2,267

$5.009

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$4.508

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AZTECH Wire

Italy . 874 parts In-Stock

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$8.028

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874

$8.028

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One Stop Electronics

USA . 1,005 parts In-Stock

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$9.000

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$9.000

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Corphita

USA . 478 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TM4SR72EPH-10 by Texas Instruments. As a leader in the industry, Texas Instruments delivers exceptional quality and reliability in their products. The TM4SR72EPH-10 falls under the category of Other Function Memory ICs, offering versatile applications for various electronic devices. With a nominal supply voltage of 3.3V and a maximum clock frequency of 100 MHz, this memory IC provides high performance and efficiency. Experience seamless operation and optimized functionality with the TM4SR72EPH-10, setting new standards in memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable casing for the memory IC, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard supply voltage of 3.3V, ensuring compatibility with common power sources.

No. of Terminals: 168

Offers a high number of terminals for connecting to other components, allowing for complex circuit designs.

Maximum Operating Temperature: 70 °C

Can withstand high operating temperatures of up to 70°C, ensuring reliability in harsh environments.

Organization: 4MX72

Organized in a 4MX72 configuration, providing a large memory capacity for storing a vast amount of data.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation, making it energy-efficient and fast.

Technical Specifications

Other Function Memory ICs TM4SR72EPH-10 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

7.5 ns

Maximum Clock Frequency (fCLK):

100 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDMA-N168

Memory Density:

301989888 bit

Memory Width:

72

No. of Terminals:

168

No. of Words:

4194304 words

No. of Words Code:

4M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX72

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

DIMM168

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Standby Current:

.001 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

Other Memory ICs

Maximum Supply Current:

140 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

TM4SR72EPH-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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