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SN7489J

Texas Instruments

SN7489J by Texas Instruments

SN7489J by Texas Instruments is a 16x4 memory circuit IC with CMOS technology. It operates asynchronously at 5V, with open-collector output and a max access time of 60ns. Ideal for applications requiring parallel memory storage in commercial temperature environments.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Vyrian

USA . 2,909 parts In-Stock

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Digiode

USA . 1,487 parts In-Stock

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ComSIT Distribution GmbH

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Electro Mavin

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Sunrise Surplus Inc.

USA . 13 parts In-Stock

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Electronic Expediters

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Parana Technologies

USA . 803 parts In-Stock

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$4.694

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$5.179

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DigiPath Technology Company

USA . 52 parts In-Stock

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$5.169

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$4.755

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ChromeModa Solutions

Germany . 4,336 parts In-Stock

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$5.274

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$4.325

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IDEA Electronic Components Group

UK . 1,401 parts In-Stock

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Semicontronic

India . 1,352 parts In-Stock

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$7.000

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$6.825

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$6.790

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AZTECH Wire

Italy . 496 parts In-Stock

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One Stop Electronics

USA . 1,118 parts In-Stock

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Corphita

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Kepictronics

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Overview

Upgrade your electronic devices with the SN7489J by Texas Instruments, a top-quality Other Function Memory IC perfect for a wide range of applications. With a durable ceramic, metal-sealed co-fired package and an operating voltage of 5V, this memory circuit offers reliable performance in any setting. Experience fast access times, efficient data storage, and seamless integration with the 16x4 organization and open-collector output characteristics. Trust Texas Instruments for cutting-edge technology and unparalleled value in memory ICs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material ensures durability and reliability, making the product suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of electronic devices.

Organization: 16X4

With 16 words and a memory width of 4, this organization provides efficient and structured data storage.

Output Characteristics: OPEN-COLLECTOR

The open-collector output allows for easy interfacing with other digital circuits, enhancing connectivity.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to energy efficiency and stable performance.

Memory Density: 64 bit

With a memory density of 64 bits, this IC can store a significant amount of data in a compact form factor.

Technical Specifications

Other Function Memory ICs SN7489J attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-CDIP-T16

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X4

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN7489J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-00-007-4100, 5962000074100, 5962-00-632-5205, 5962006325205, 5962-01-092-7682, 5962010927682, 5962-99-118-7408, 5962991187408

NIIN

000074100, 006325205, 010927682, 991187408

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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