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M36LLR8760D1ZAQT

STMicroelectronics

M36LLR8760D1ZAQT by STMicroelectronics

M36LLR8760D1ZAQT by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH and PSRAM. It operates at a nominal voltage of 1.8V with a max temp of 85 °C, ideal for compact applications. Its grid array design ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,319 parts In-Stock

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Digiode

USA . 921 parts In-Stock

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921

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Vyrian

USA . 674 parts In-Stock

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674

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 202 parts In-Stock

1+ parts

$3.360

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$3.024

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202

$3.360

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$3.024

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MKK Technologies

India . 94 parts In-Stock

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$6.318

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94

$6.318

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DigiPath Technology Company

USA . 94 parts In-Stock

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$6.318

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94

$6.318

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Corphita

USA . 1,678 parts In-Stock

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Parana Technologies

USA . 1,333 parts In-Stock

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$4.017

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$4.017

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Overview

Unlock the potential of your designs with the M36LLR8760D1ZAQT from STMicroelectronics. Renowned for its cutting-edge quality and reliability, this versatile memory IC combines FLASH and PSRAM technology, ensuring efficiency in even the most demanding applications. With a compact footprint and robust performance across diverse temperature ranges, it enhances system speed while minimizing power consumption. Experience exceptional value and innovation that STMicroelectronics consistently delivers to propel your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures protection against environmental factors, enhancing the reliability of the memory IC.

Surface Mount: YES

Surface mount technology allows for smaller device designs, improving PCB density and overall product miniaturization.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the circuit board, allowing for easier integration into compact designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies memory access, leading to increased system performance in applications requiring immediate data retrieval.

Mixed Memory Type: FLASH+PSRAM

Combining Flash and PSRAM provides enhanced versatility for various applications, catering to both storage and speed requirements.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal voltage enhances power efficiency, making this memory IC ideal for battery-operated devices.

Power Supplies (V): 1.8

The use of a single power supply voltage simplifies circuit design and reduces component count.

No. of Terminals: 88

A higher terminal count allows for more connectivity options, enabling complex integrations in advanced electronic systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style enables high-density mounting, essential for modern compact electronic devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Organization: 16MX16

This organization configuration caters to specific data structuring needs, balancing speed and memory accessibility.

Minimum Operating Temperature: -25 °C

Operating at low temperatures increases the versatility of this memory IC for use in diverse applications and environments.

Terminal Finish: TIN LEAD

The tin lead finish ensures good solderability and reliability in electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning supports a more compact design and improves thermal dissipation during operation.

Maximum Seated Height: 1.4 mm

A low profile design helps maintain slim device profiles without compromising performance.

Width: 8 mm

Compact width facilitates space-efficient layouts on circuit boards.

Minimum Supply Voltage (Vsup): 1.7 V

Lower minimum voltage allows for utilization in a broader range of power supply configurations.

Length: 10 mm

This length ensures compatibility with various board designs while maintaining high density.

Technology: CMOS

CMOS technology leads to lower power consumption and enhanced integration capabilities, boosting overall performance.

Terminal Form: BALL

Ball terminal form enhances the reliability of connections and allows for easier soldering to PCBs.

Maximum Supply Current: 52 mA

The manageable supply current ensures efficient power consumption, making it suitable for low-power applications.

No. of Words: 16777216 words

A high word count supports extensive data storage, making it ideal for applications requiring significant memory capacity.

Memory Width: 16

A memory width of 16 bits enhances data transfer rates and improves processing speeds in various applications.

Terminal Pitch: 0.8 mm

A fine terminal pitch enables high-density designs, essential for modern electronic systems.

No. of Words Code: 16M

This coding indicates significant storage capabilities, allowing extensive data handling for complex applications.

Maximum Supply Voltage (Vsup): 1.95 V

A slightly higher maximum voltage provides flexibility in power supply options while maintaining efficiency.

Memory Density: 268435456 bit

High memory density is crucial for accommodating data-intensive applications, supporting modern computing needs.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit type, this product excels in storage capabilities, making it suitable for various electronic applications.

Maximum Standby Current: 0.00011 Amp

Extremely low standby current optimizes power consumption, beneficial for battery-saving applications.

Technical Specifications

Other Function Memory ICs M36LLR8760D1ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760D1ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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