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M36W216B100ZA1

STMicroelectronics

M36W216B100ZA1 by STMicroelectronics

M36W216B100ZA1 from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -40 °C to 70 °C, making it ideal for commercial applications in compact devices. With 1M words and a fine-pitch grid array, it's perfect for high-density memory needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,841 parts In-Stock

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3,841

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Vyrian

USA . 3,166 parts In-Stock

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3,166

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Anansix

USA . 1,874 parts In-Stock

1+ parts

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1,874

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,928 parts In-Stock

1+ parts

$3.687

100+ parts

-

1k+ parts

$3.319

10k+ parts

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1,928

$3.687

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$3.319

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MKK Technologies

India . 1,908 parts In-Stock

1+ parts

$6.934

100+ parts

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1,908

$6.934

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DigiPath Technology Company

USA . 1,908 parts In-Stock

1+ parts

$6.934

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1,908

$6.934

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Corphita

USA . 2,489 parts In-Stock

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2,489

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Parana Technologies

USA . 2,353 parts In-Stock

1+ parts

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$4.409

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2,353

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$4.409

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Overview

Unlock the potential of your designs with the M36W216B100ZA1 from STMicroelectronics, a trusted leader in innovative memory solutions. This high-quality asynchronous memory IC combines reliability and enhanced performance, making it ideal for diverse applications like consumer electronics, industrial automation, and telecommunications. With its compact, low-profile design, it seamlessly integrates into your projects, delivering exceptional value and efficiency that elevate your products above the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and thermal performance, making it suitable for various applications.

Surface Mount: YES

Being surface mount allows for space-saving designs and easier integration into modern electronic systems.

Package Shape: RECTANGULAR

The rectangular shape optimizes board space and allows for efficient routing of signals in dense layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides ease of use and flexibility in system design, particularly in high-speed applications.

Nominal Supply Voltage / Vsup: 3 V

With a nominal supply voltage of 3V, this memory IC is energy-efficient, making it ideal for battery-operated devices.

No. of Terminals: 66

A higher number of terminals allows for better connectivity options and improved performance in complex systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This low-profile, fine-pitch design helps in minimizing the footprint on the PCB, ideal for compact applications.

Maximum Operating Temperature: 70 °C

Operating at a maximum temperature of 70 °C ensures reliability in various environments, suitable for commercial applications.

Organization: 1MX16

The 1MX16 organization provides a balanced architecture for read and write operations, optimizing data handling efficiency.

Minimum Operating Temperature: 0 °C

With a minimum temperature requirement of 0 °C, this IC can function in a wide range of environments.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates better thermal performance and is advantageous in space-constrained designs.

Maximum Seated Height: 1.4 mm

A low seated height enhances compatibility with various low-profile applications and contributes to compact designs.

Width: 8 mm

An 8 mm width allows for efficient utilization of board space while maintaining high performance.

Minimum Supply Voltage (Vsup): 2.7 V

The capability to operate at a minimum voltage of 2.7 V provides flexibility for varied power supply designs.

Length: 12 mm

The compact length of 12 mm allows for integration into smaller devices or systems where space is critical.

Temperature Grade: COMMERCIAL

This commercial temperature grade ensures reliability in standard operating environments, making it suitable for a range of applications.

Technology: CMOS

CMOS technology enhances performance and reduces power consumption, making this IC more efficient.

Terminal Form: BALL

Ball terminal form provides a reliable connection and simplifies the assembly process on PCBs.

No. of Words: 1048576 words

The extensive memory capacity of 1,048,576 words offers significant data storage capabilities for various applications.

Memory Width: 16

A 16-bit memory width allows for efficient processing of data, enhancing overall system performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for high-density connections in modern electronic designs.

No. of Words Code: 1M

With a memory coding of 1M words, this IC is capable of handling substantial information, suitable for data-intensive applications.

Maximum Supply Voltage (Vsup): 3.3 V

The ability to operate at a maximum voltage of 3.3 V provides compatibility with a wide range of electronic devices.

Memory Density: 16777216 bit

High memory density of 16,777,216 bits enables the storage of large amounts of data, perfect for advanced applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory IC, it is ideal for applications requiring reliable data storage and retrieval.

Technical Specifications

Other Function Memory ICs M36W216B100ZA1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B100ZA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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