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DS6417P-004

Analog Devices

DS6417P-004 by Analog Devices

DS6417P-004 by Analog Devices is a 512Kx8 MEMORY CIRCUIT with CMOS tech. It operates SYNCHRONOUSLY at 5V, suitable for MICROELECTRONIC ASSEMBLIES. With a temp range of 0-70 °C, it's ideal for commercial applications requiring high memory density and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,712 parts In-Stock

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Digiode

USA . 1,669 parts In-Stock

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Anansix

USA . 1,507 parts In-Stock

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MARBEL Systems

Belgium . 4,954 parts In-Stock

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$2.284

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Texas Native Microelectronics

USA . 582 parts In-Stock

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$2.625

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$2.520

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$2.441

10k+ parts

$2.310

582

$2.625

$2.520

$2.441

$2.310

Northwest PG Solutions

USA . 2,888 parts In-Stock

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$2.986

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$2.986

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Semicontronic

India . 1,137 parts In-Stock

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$3.000

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$2.925

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$2.910

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$2.910

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Kenton Components

USA . 5,901 parts In-Stock

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$3.150

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Qasali Group International

UK . 228 parts In-Stock

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$7.088

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$6.591

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$6.237

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$6.237

AZTECH Wire

Italy . 745 parts In-Stock

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$7.400

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One Stop Electronics

USA . 1,655 parts In-Stock

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$15.000

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Native Components

USA . 872 parts In-Stock

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Corphita

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Overview

Unlock the power of reliable data storage with the DS6417P-004 by Analog Devices. As a leading manufacturer in the industry, Analog Devices delivers top-quality products that exceed expectations. Perfect for various applications, this memory circuit offers seamless synchronous operation and a wide supply voltage range, ensuring optimal performance in any setting. Experience fast data access and secure storage capabilities with the DS6417P-004, providing unmatched value and efficiency to customers looking to elevate their electronic devices. Trust Analog Devices for superior technology solutions that make a difference.

Feature Benefit Bullets

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization, making this memory IC suitable for applications where timing accuracy is crucial.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard 5V supply voltage makes this memory IC compatible with many existing systems and reduces the need for additional voltage regulation.

Package Style: MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style ensures compact and efficient integration into electronic devices, saving space and improving overall system performance.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this memory IC can withstand demanding environmental conditions without compromising performance.

Organization: 512KX8

The 512KX8 organization allows for efficient data storage and retrieval, enabling seamless operation in a wide range of memory-intensive applications.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures reliable performance even in cold environments, making this memory IC versatile and dependable.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides excellent solderability and reliability, simplifying the assembly process and ensuring long-term durability of the memory IC.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, making this memory IC energy-efficient and reliable for a wide range of applications.

Memory Density: 4194304 bit

With a high memory density of 4194304 bits, this memory IC can store a large amount of data in a compact form factor, making it ideal for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC is specifically designed for storing and retrieving data, providing reliable and efficient memory functionality in electronic devices.

Technical Specifications

Other Function Memory ICs DS6417P-004 attributes and parameters. Explore more Other Function Memory ICs devices from Analog Devices

Specs

JESD-30 Code:

X-XXMA-X

JESD-609 Code:

e0

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Trade Compliance

DS6417P-004 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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