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MR20H40DF

Everspin Technologies

MR20H40DF by Everspin Technologies

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Words: 524288 words;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Other Function Memory ICs MR20H40DF attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Trade Compliance

MR20H40DF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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