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SN74S478N

Texas Instruments

SN74S478N by Texas Instruments

SN74S478N by Texas Instruments is a 1Kx8 MEMORY CIRCUIT IC with 8192 bit memory density. It operates at 5V, has an access time of 70ns, and supports asynchronous mode. This RECTANGULAR package with PLASTIC/EPOXY body material is ideal for commercial applications requiring reliable memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,962 parts In-Stock

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Digiode

USA . 1,415 parts In-Stock

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ICP Electronique

France . 87 parts In-Stock

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Electronic Expediters

USA . 2 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 664 parts In-Stock

1+ parts

$3.272

100+ parts

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$3.798

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664

$3.272

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$3.798

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DigiPath Technology Company

USA . 1,988 parts In-Stock

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$3.602

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$3.314

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$3.602

$3.314

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ChromeModa Solutions

Germany . 6,999 parts In-Stock

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$3.676

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$3.014

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$3.676

$3.014

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IDEA Electronic Components Group

UK . 2,221 parts In-Stock

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$3.676

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$3.308

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$3.676

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AZTECH Wire

Italy . 293 parts In-Stock

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$11.860

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293

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One Stop Electronics

USA . 273 parts In-Stock

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$17.000

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Corphita

USA . 221 parts In-Stock

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Assy Fe

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Overview

Upgrade your electronics with the SN74S478N by Texas Instruments, a high-quality memory circuit that offers reliable performance and versatility. Manufactured by the trusted brand Texas Instruments, this memory IC is perfect for a wide range of applications. With its durable plastic/epoxy package body and asynchronous operating mode, this product ensures seamless functionality. Experience the value and benefits of this innovative technology, providing you with 1Kx8 organization, 1024 words, and a memory width of 8. Trust in Texas Instruments for your memory circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package material provides good protection for the memory IC, ensuring its durability and longevity.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in data transfers and communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this memory IC compatible with a wide range of systems and applications.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable operation in typical ambient temperature environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the memory IC efficient and reliable.

Technical Specifications

Other Function Memory ICs SN74S478N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S478N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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