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TMS4025NC

Texas Instruments

TMS4025NC by Texas Instruments

TMS4025NC by Texas Instruments is a 1KX2 MOS memory IC with 2048-bit density. It operates b/w -25°C to 70°C, featuring separate I/O and open-drain output characteristics. This rectangular package with 24 terminals in-line is ideal for applications requiring reliable memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,353 parts In-Stock

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4,353

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Digiode

USA . 1,123 parts In-Stock

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1,123

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,745 parts In-Stock

1+ parts

$4.143

100+ parts

$384.736

1k+ parts

$3.729

10k+ parts

-

1,745

$4.143

$384.736

$3.729

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DigiPath Technology Company

USA . 457 parts In-Stock

1+ parts

$4.562

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-

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457

$4.562

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ChromeModa Solutions

Germany . 4,554 parts In-Stock

1+ parts

$4.655

100+ parts

$3.817

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4,554

$4.655

$3.817

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IDEA Electronic Components Group

UK . 789 parts In-Stock

1+ parts

$4.655

100+ parts

-

1k+ parts

$4.190

10k+ parts

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789

$4.655

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$4.190

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One Stop Electronics

USA . 678 parts In-Stock

1+ parts

$16.000

100+ parts

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678

$16.000

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AZTECH Wire

Italy . 271 parts In-Stock

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$18.795

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271

$18.795

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Corphita

USA . 577 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS4025NC by Texas Instruments. Designed with precision and expertise, this memory IC offers unparalleled performance and reliability. From industrial automation to consumer electronics, this versatile product caters to a wide range of applications, providing seamless integration and superior functionality. Elevate your projects with the value, benefits, and advantages that only Texas Instruments can deliver. Choose quality, choose excellence, choose the TMS4025NC for all your memory IC needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the memory IC, allowing it to withstand various environmental conditions.

Input/Output Type: SEPARATE

Separate input/output functionality allows for efficient data transfer and operation, enhancing performance.

No. of Terminals: 24

Having 24 terminals provides plenty of connectivity options for versatile integration into different systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can function reliably in various temperature environments.

Minimum Operating Temperature: -25 °C

The minimum operating temperature of -25°C ensures that the memory IC remains operational even in cold conditions.

Technology: MOS

MOS technology offers high-speed performance and low power consumption, making it an efficient choice for memory ICs.

Memory Width: 2

With a memory width of 2 bits, this memory IC can handle data processing efficiently.

No. of Words: 1024 words

Having 1024 words of memory capacity allows for storing a significant amount of data, making it suitable for various applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54mm enables easy connections and integration into circuit boards, enhancing usability.

Memory Density: 2048 bit

With a memory density of 2048 bits, this memory IC offers sufficient storage capacity for processing data efficiently.

Refresh Cycles: 1024

The refresh cycles of 1024 help maintain the integrity of stored data, ensuring reliable operation over time.

Technical Specifications

Other Function Memory ICs TMS4025NC attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T24

Memory Density:

2048 bit

Memory Width:

2

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

1KX2

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Refresh Cycles:

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS4025NC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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