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MT43A4G40200NFA-S15:A

Micron Technology

MT43A4G40200NFA-S15:A by Micron Technology

Micron Technology's MT43A4G40200NFA-S15:A is a 4GX4 memory IC with 17179869184 bit density. Operating at 1.2V, it features synchronous mode and 896 terminals in a square GRID ARRAY package. Ideal for applications requiring high memory capacity and fast data processing in electronic devices.

Median Price

$600.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$600.000

100+ parts

-

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72

$600.000

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Vyrian

USA . 2,696 parts In-Stock

1+ parts

-

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-

1k+ parts

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2,696

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Digiode

USA . 1,581 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,581

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Velocity Electronics

USA . 5 parts In-Stock

1+ parts

-

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 384 parts In-Stock

1+ parts

$9.544

100+ parts

-

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384

$9.544

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Ampacity Inc.

Singapore . 244 parts In-Stock

1+ parts

$25.000

100+ parts

-

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244

$25.000

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-

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Argo Parts USA

USA . 3,127 parts In-Stock

1+ parts

$600.000

100+ parts

$594.000

1k+ parts

$588.000

10k+ parts

$582.000

3,127

$600.000

$594.000

$588.000

$582.000

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$600.000

100+ parts

-

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10k+ parts

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2,000

$600.000

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Continental Prestige Electronics

USA . 598 parts In-Stock

1+ parts

$600.000

100+ parts

-

1k+ parts

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10k+ parts

$588.000

598

$600.000

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$588.000

QUARKTWIN TECHNOLOGY LTD

USA . 15,824 parts In-Stock

1+ parts

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100+ parts

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15,824

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A-Z Elektronik GmbH

Germany . 5,193 parts In-Stock

1+ parts

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5,193

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Kepictronics

USA . 500 parts In-Stock

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500

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Corphita

USA . 260 parts In-Stock

1+ parts

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260

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Speed Components Ltd (Excess)

Israel . 2 parts In-Stock

1+ parts

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100+ parts

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2

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Overview

Unlock the power of cutting-edge technology with the MT43A4G40200NFA-S15:A by Micron Technology. As a leader in memory ICs, Micron guarantees top-notch quality and reliability. This versatile product is perfect for a wide range of applications, offering seamless operation and optimal performance. Experience the value and benefits of this innovative solution, designed to meet your unique needs and exceed your expectations. Trust Micron Technology for all your memory circuit requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the memory IC, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enhances the efficiency and speed of data transfer, making this memory IC suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.2

Optimal voltage level for reliable operation and power efficiency.

No. of Terminals: 896

Provides a high level of connectivity for various data inputs and outputs, increasing flexibility in design.

Package Style (Meter): GRID ARRAY

Offers a compact and organized layout for terminals, contributing to space-saving in the overall system design.

Maximum Operating Temperature: 105 °C

Allows the memory IC to function reliably in demanding temperature conditions without risk of overheating.

Organization: 4GX4

Indicates a high organization level, enabling efficient data storage and retrieval processes.

Minimum Operating Temperature: 0 °C

Ensures consistent performance even in cold environments, expanding the range of applications for this memory IC.

Terminal Position: BOTTOM

Facilitates easy connection with other components on the circuit board, simplifying the integration process.

Maximum Seated Height: 4.2 mm

Contributes to a low-profile design for space-constrained applications.

Width: 31 mm

Offers a standard size that is compatible with various PCB layouts and designs.

Minimum Supply Voltage (Vsup): 1.14 V

Provides a lower threshold for operating voltage, ensuring stability even under fluctuating power conditions.

Length: 31 mm

Maintains a square package shape for uniformity in installation and handling.

Technology: CMOS

Utilizes CMOS technology for low power consumption and efficient operation.

Terminal Form: BALL

Enables secure and reliable connections with the PCB, reducing the risk of loose contacts.

No. of Words: 4294967296 words

Provides a large capacity for data storage, accommodating extensive information processing requirements.

Memory Width: 4

Supports data transfer in 4-bit chunks, enhancing the speed and efficiency of memory operations.

Terminal Pitch: 1 mm

Allows for precise and compact arrangement of terminals, optimizing PCB layout and space usage.

No. of Words Code: 4G

Indicates a high memory capacity in the gigabit range, suitable for advanced computing and data-intensive applications.

Maximum Supply Voltage (Vsup): 1.26 V

Defines the upper limit for safe voltage input, ensuring protection against overvoltage situations.

Memory Density: 17179869184 bit

Offers a high density of memory storage per unit area, maximizing data processing capabilities.

Memory IC Type: MEMORY CIRCUIT

Specifically designed for memory-related functions, ensuring reliability and performance in data handling tasks.

Technical Specifications

Other Function Memory ICs MT43A4G40200NFA-S15:A attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE

JESD-30 Code:

S-PBGA-B896

Length:

31 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

896

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

4.2 mm

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

31 mm

Trade Compliance

MT43A4G40200NFA-S15:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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