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M36W108T100ZM1T

STMicroelectronics

M36W108T100ZM1T by STMicroelectronics

M36W108T100ZM1T by STMicroelectronics is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and temperature grade of commercial. This low-profile grid array package is suitable for various memory circuit applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,054 parts In-Stock

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3,054

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Vyrian

USA . 1,085 parts In-Stock

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1,085

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Anansix

USA . 123 parts In-Stock

1+ parts

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123

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,677 parts In-Stock

1+ parts

$2.449

100+ parts

-

1k+ parts

$2.204

10k+ parts

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1,677

$2.449

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$2.204

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MKK Technologies

India . 339 parts In-Stock

1+ parts

$4.605

100+ parts

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339

$4.605

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DigiPath Technology Company

USA . 339 parts In-Stock

1+ parts

$4.605

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339

$4.605

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Parana Technologies

USA . 732 parts In-Stock

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$2.928

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732

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$2.928

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Corphita

USA . 409 parts In-Stock

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409

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Overview

Unlock endless possibilities with the M36W108T100ZM1T by STMicroelectronics, a leading manufacturer in the industry. This state-of-the-art memory IC offers unparalleled quality and reliability for a wide range of applications. Whether you're looking to enhance your electronic devices or streamline your systems, this product provides exceptional value, benefits, and advantages that will exceed your expectations. Trust STMicroelectronics to deliver innovative solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection to the memory IC, making it suitable for various environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving time and effort.

Package Shape: RECTANGULAR

The rectangular shape is commonly used and fits well within standard circuit board layouts.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode allows for independent data transfers, making it versatile for different applications.

No. of Terminals: 48

With a sufficient number of terminals, this memory IC can easily connect and interface with other components in a circuit.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The grid array, low profile package style helps in saving space on the circuit board, ideal for compact electronic devices.

Maximum Operating Temperature: 70 °C

The memory IC can withstand high operating temperatures, ensuring reliability even in harsh conditions.

Organization: 1MX8

The organization of 1MX8 means it has a capacity of 1 megabit, organized in 8 bits, providing sufficient memory storage for various data.

Minimum Operating Temperature: 0 °C

With a low minimum operating temperature, this memory IC can function effectively in a wide range of environments.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure connection to the circuit board, enhancing reliability.

Maximum Seated Height: 1.35 mm

The low seated height of 1.35 mm helps in slim and compact device designs, saving space and improving aesthetics.

Width: 9.8 mm

The moderate width of 9.8 mm enables easy integration into circuit board layouts without taking up excessive space.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage requirement of 2.7 V helps in power efficiency and compatibility with various power sources.

Length: 11.8 mm

The compact length of 11.8 mm contributes to the overall small form factor of the memory IC, suitable for portable devices.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance in standard operating temperature ranges typically found in commercial applications.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and compatibility with various digital systems, enhancing performance.

Terminal Form: BALL

The ball terminal form provides secure and reliable connections to the circuit board, minimizing the risk of loose connections.

No. of Words: 1048576 words

With a high number of words, this memory IC can store a large amount of data, suitable for memory-intensive applications.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and retrieval, enhancing the overall performance of the memory IC.

Terminal Pitch: 1 mm

The terminal pitch of 1 mm provides sufficient spacing for easy assembly and soldering of the memory IC onto the circuit board.

No. of Words Code: 1M

The code indicating 1M words signifies the high memory capacity of 1 megabit, suitable for handling large volumes of data.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V ensures compatibility with a wide range of power sources while maintaining safe operation.

Memory Density: 8388608 bit

With a high memory density of 8388608 bits, this memory IC can store large amounts of data in a compact form factor.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is specifically designed for efficient data storage and retrieval, providing reliable memory functionality.

Technical Specifications

Other Function Memory ICs M36W108T100ZM1T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZM1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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