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TMS27L08JL

Texas Instruments

TMS27L08JL by Texas Instruments

TMS27L08JL by Texas Instruments is a 1KX8 OTP ROM memory IC with 8192-bit density and 450ns access time. It operates b/w 0-70°C, featuring a 3-STATE output and MOS technology. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

$16.320

Lifecycle Status

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10

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TEDSS.com

USA . 15 parts In-Stock

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Vyrian

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Digiode

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Electronic Expediters

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Beltway Electronics Company

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GES GmbH

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MRC Electronics

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ACDS - Activité Composants Distribution Service

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Parana Technologies

USA . 670 parts In-Stock

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$4.581

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DigiPath Technology Company

USA . 1,934 parts In-Stock

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ChromeModa Solutions

Germany . 5,649 parts In-Stock

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IDEA Electronic Components Group

UK . 1,893 parts In-Stock

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AZTECH Wire

Italy . 767 parts In-Stock

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One Stop Electronics

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Corphita

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Infinite Electronics LLP (Excess)

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the TMS27L08JL memory IC. Designed for a wide range of applications, this 1Kx8 OTP ROM offers unmatched value and performance to customers. With a temperature grade of commercial and a maximum operating temperature of 70°C, this IC is perfect for demanding environments. Trust Texas Instruments for cutting-edge technology and superior products that exceed expectations. Elevate your designs with the TMS27L08JL and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic materials offer high thermal conductivity and resistance to heat, making this memory IC suitable for applications in environments with high temperatures.

No. of Terminals: 24

Having more terminals allows for more connections and flexibility in the design and application of the memory IC.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this memory IC can withstand elevated temperatures without performance degradation.

Output Characteristics: 3-STATE

The 3-STATE output allows for multiple memory ICs to be connected on the same data bus without interference, enhancing system design flexibility.

Memory Density: 8192 bit

High memory density ensures that a large amount of data can be stored in a compact space, making this memory IC efficient in terms of storage capacity.

Maximum Access Time: 450 ns

With a fast maximum access time, this memory IC can quickly retrieve stored information, making it suitable for applications that require rapid data access.

Technical Specifications

Other Function Memory ICs TMS27L08JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS27L08JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-310-3780, 5962013103780

NIIN

013103780

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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