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DM76S64BWF/J883B

Texas Instruments

DM76S64BWF/J883B by Texas Instruments

DM76S64BWF/J883B by Texas Instruments is a MILITARY-grade TTL memory IC with 16 terminals in IN-LINE package. Operating temp range: -55 to 125°C. Ideal for applications requiring high reliability and performance in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,327 parts In-Stock

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Digiode

USA . 2,096 parts In-Stock

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Anansix

USA . 1,939 parts In-Stock

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One Stop Electronics

USA . 454 parts In-Stock

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$1.000

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Parana Technologies

USA . 1,392 parts In-Stock

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$4.943

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$5.481

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DigiPath Technology Company

USA . 823 parts In-Stock

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$5.443

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$5.007

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823

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ChromeModa Solutions

Germany . 5,901 parts In-Stock

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$5.554

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$4.554

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$5.554

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IDEA Electronic Components Group

UK . 1,596 parts In-Stock

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$5.554

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$4.999

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AZTECH Wire

Italy . 534 parts In-Stock

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$6.340

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Corphita

USA . 2,902 parts In-Stock

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Northwest PG Solutions

USA . 2,125 parts In-Stock

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Native Components

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Overview

Discover the top-quality DM76S64BWF/J883B by Texas Instruments, a cutting-edge Other Function Memory IC that delivers unmatched performance and reliability. Crafted by renowned manufacturer Texas Instruments, this military-grade product is designed for a wide range of applications. With its ceramic package body material and superior technology, this IC ensures optimal performance in extreme temperatures. Upgrade your systems with the DM76S64BWF/J883B and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal conductivity and high mechanical strength, making them ideal for applications where temperature management is crucial.

Screening Level: 38535Q/M;38534H;883B

This screening level ensures high quality and reliability, making the product suitable for demanding military or aerospace applications.

Package Shape: RECTANGULAR

Rectangular packages are typically more space-efficient and easier to handle during assembly, optimizing overall system design.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand elevated temperatures without compromising performance or reliability.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures allows the product to function reliably in various environments, ensuring operational flexibility.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides excellent solderability and electrical conductivity, facilitating easy and reliable connections in circuit assemblies.

Temperature Grade: MILITARY

A military temperature grade indicates that the product is designed to meet stringent performance requirements and operate reliably in challenging conditions.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, making the product suitable for high-speed digital applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals simplify the assembly process and provide mechanical stability, ensuring secure connections in rugged environments.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54mm facilitates compatibility with commonly used PCB layouts and components, enhancing ease of integration.

Technical Specifications

Other Function Memory ICs DM76S64BWF/J883B attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T16

JESD-609 Code:

e0

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

DM76S64BWF/J883B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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