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M36W216BI85ZA1

STMicroelectronics

M36W216BI85ZA1 by STMicroelectronics

M36W216BI85ZA1 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at a nominal voltage of 3V and supports temperatures up to 70 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,107 parts In-Stock

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3,107

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Digiode

USA . 2,873 parts In-Stock

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2,873

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Anansix

USA . 2,255 parts In-Stock

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2,255

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 219 parts In-Stock

1+ parts

$3.526

100+ parts

-

1k+ parts

$3.174

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219

$3.526

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$3.174

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MKK Technologies

India . 200 parts In-Stock

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$6.631

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200

$6.631

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DigiPath Technology Company

USA . 200 parts In-Stock

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$6.631

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200

$6.631

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Corphita

USA . 1,117 parts In-Stock

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1,117

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Parana Technologies

USA . 761 parts In-Stock

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$4.216

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761

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$4.216

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Overview

Unlock unparalleled performance with the M36W216BI85ZA1 from STMicroelectronics, a leader in innovative memory solutions. This advanced dual Flash+SRAM memory IC excels in versatile applications, delivering exceptional speed and reliability for your projects. Its compact design ensures seamless integration, while its low power consumption maximizes efficiency—ideal for both commercial and consumer electronics. Experience quality you can trust and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures resilience and long-lasting performance, making it suitable for a variety of applications.

Surface Mount: YES

The surface mount technology allows for smaller device footprints and facilitates automated assembly processes, thus reducing production costs.

Package Shape: RECTANGULAR

A rectangular package shape is efficient for space optimization on printed circuit boards (PCBs).

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances system performance by allowing the memory to read and write data independently of the clock signal, thus simplifying design.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM technologies provides both fast access and non-volatile storage, making the product versatile for different applications.

Nominal Supply Voltage / Vsup: 3 V

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of electronic devices, making it a flexible choice.

Power Supplies (V): 3

Having a single power supply requirement simplifies the design and reduces overall system complexity.

No. of Terminals: 66

More terminals provide enhanced connectivity options and greater versatility in integrating with other components.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This style allows for efficient space usage while ensuring good thermal dissipation, suitable for compact designs.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in moderate environments, suitable for commercial applications.

Organization: 1MX16

The 1Mx16 organization provides a balance of density and access speed, making it great for a range of memory-intensive applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature down to 0 °C allows use in various environments, increasing versatility.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

This terminal finish offers excellent solderability and reliability, ensuring long-term performance.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes space and promotes manufacturing efficiency with automated assembly.

Maximum Seated Height: 1.4 mm

A low seated height is ideal for compact designs and helps ensure compatibility with various PCB layouts.

Width: 8 mm

A width of 8 mm enables it to fit easily into constrained spaces on circuit boards.

Minimum Supply Voltage (Vsup): 2.7 V

Operating down to 2.7 V allows flexibility in design while also accommodating a variety of power supply options.

Length: 12 mm

At 12 mm in length, this product strikes a balance between compact design and sufficient pin density for functionality.

Temperature Grade: COMMERCIAL

Commercial temperature grade suggests this IC is designed for a reliable lifespan in standard operating conditions.

Technology: CMOS

CMOS technology provides low power consumption, enabling battery-operated applications and enhancing energy efficiency.

Terminal Form: BALL

Ball form terminals improve electrical performance and mechanical strength, ensuring durability during assembly.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures the IC can handle demanding applications without excessive power consumption.

No. of Words: 1,048,576 words

With over a million words of capacity, the IC is able to handle large datasets and complex tasks efficiently.

Memory Width: 16

A memory width of 16 bits enables fast data access and processing, making it ideal for high-speed applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm offers a good balance between size and ease of soldering in compact Layouts.

No. of Words Code: 1M

The coding of 1M words indicates the capacity for significant data storage, suitable for various applications.

Maximum Supply Voltage (Vsup): 3.3 V

The maximum supply voltage of 3.3V allows the IC to integrate smoothly with modern digital circuits.

Memory Density: 16,777,216 bit

A high memory density of 16 Megabits provides ample storage for data-rich applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit IC, it is designed specifically for high efficiency in data storage and retrieval.

Maximum Standby Current: 0.00001 Amp

The very low maximum standby current ensures minimal power drain when inactive, extending battery life in portable devices.

Maximum Access Time: 85 ns

A maximum access time of 85 ns allows for rapid data processing, making it suitable for high-performance applications.

Technical Specifications

Other Function Memory ICs M36W216BI85ZA1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI85ZA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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