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M36W216BI85ZA6

STMicroelectronics

M36W216BI85ZA6 by STMicroelectronics

M36W216BI85ZA6 by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates b/w -40 °C to 85 °C and requires a supply voltage of 2.7V to 3.3V. Ideal for industrial applications, it offers efficient performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,543 parts In-Stock

1+ parts

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4,543

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Anansix

USA . 2,311 parts In-Stock

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2,311

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Digiode

USA . 1,838 parts In-Stock

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1,838

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 568 parts In-Stock

1+ parts

$4.134

100+ parts

-

1k+ parts

$3.720

10k+ parts

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568

$4.134

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$3.720

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MKK Technologies

India . 1,624 parts In-Stock

1+ parts

$7.773

100+ parts

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1,624

$7.773

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DigiPath Technology Company

USA . 1,624 parts In-Stock

1+ parts

$7.773

100+ parts

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1,624

$7.773

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Corphita

USA . 3,763 parts In-Stock

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3,763

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Parana Technologies

USA . 680 parts In-Stock

1+ parts

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100+ parts

$4.942

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680

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$4.942

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Overview

Unlock unparalleled performance with the M36W216BI85ZA6 from STMicroelectronics, a leader in innovative memory solutions. This high-quality FLASH+SRAM hybrid offers exceptional reliability in demanding applications, ensuring your designs achieve optimal efficiency and speed. With robust operating temperature ranges and low power consumption, it’s perfect for industrial settings. Experience cutting-edge technology that enhances your projects, driving them to success with durability and performance you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount technology allows for easier integration into compact designs, optimizing space and improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular package shape supports efficient layout on PCBs, enabling better space utilization and design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access and reduces latency, enhancing system performance in real-time applications.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM memory types offers a balance of speed and non-volatility, allowing for versatile data storage solutions.

Nominal Supply Voltage / Vsup: 3 V

With a standard supply voltage of 3V, it is compatible with a wide range of electronic systems, simplifying design requirements.

Power Supplies (V): 3

Utilizing a single supply voltage streamlines circuit design and can reduce overall power consumption.

No. of Terminals: 66

A higher number of terminals allows for increased I/O capabilities, enhancing the functionality and connectivity of the memory IC.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch design facilitate high-density mounting on PCBs, catering to modern compact electronic devices.

Maximum Operating Temperature: 85 °C

The ability to operate at higher temperatures makes this IC suitable for industrial applications where environmental conditions can be extreme.

Organization: 1MX16

The 1MX16 organization provides an efficient data layout, suitable for various memory applications and enhancing data access performance.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliability in extreme environments, making it ideal for industrial and automotive applications.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

The high-quality terminal finish provides excellent solderability and ensures reliable electrical connections over time.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier mounting on PCBs, which improves assembly efficiency and reduces manufacturing complexity.

Maximum Seated Height: 1.4 mm

A compact seated height allows for use in space-constrained applications without compromising performance or reliability.

Width: 8 mm

The moderate width of 8 mm supports versatile design options, fitting well into various applications without taking excessive space.

Minimum Supply Voltage (Vsup): 2.7 V

With a minimum supply voltage of 2.7V, this IC can function in lower power environments, enhancing battery-operated device performance.

Length: 12 mm

The length of 12 mm is conducive to many standard PCB layouts, maintaining compatibility with existing designs.

Temperature Grade: INDUSTRIAL

Industrial-grade components indicate higher reliability and longevity, suitable for harsh operational conditions.

Technology: CMOS

CMOS technology provides low power consumption and high density, making it a preferred choice for modern memory ICs.

Terminal Form: BALL

Ball terminal form enhances thermal management and electrical performance, crucial for high-speed data applications.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures efficient power usage, making this IC ideal for energy-sensitive applications.

No. of Words: 1048576 words

The large number of words translates to substantial memory capacity, allowing for extensive data storage and processing.

Memory Width: 16

A memory width of 16 bits enables efficient data handling and processing, particularly for applications requiring high throughput.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch is optimized for modern PCB designs, allowing greater density without compromising performance.

No. of Words Code: 1M

This specification indicates substantial addressing capability, enabling complex memory usage scenarios.

Maximum Supply Voltage (Vsup): 3.3 V

Operational at 3.3 V allows compatibility with a broad array of electronic devices, supporting various applications.

Memory Density: 16777216 bit

The high memory density per chip maximizes storage capabilities, essential for data-intensive applications and modern computing tasks.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, it is built for optimal performance in data retention and retrieval.

Maximum Standby Current: 0.00001 Amp

An extremely low standby current helps to preserve battery life in portable applications, enhancing overall efficiency.

Maximum Access Time: 85 ns

A fast access time of 85 ns ensures quick data retrieval, boosting performance in high-speed applications.

Technical Specifications

Other Function Memory ICs M36W216BI85ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI85ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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