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M36LLR8860M1ZAQF

STMicroelectronics

M36LLR8860M1ZAQF by STMicroelectronics

M36LLR8860M1ZAQF by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,744 parts In-Stock

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Vyrian

USA . 3,689 parts In-Stock

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Anansix

USA . 2,282 parts In-Stock

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IDEA Electronic Components Group

UK . 119 parts In-Stock

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$4.170

100+ parts

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$3.753

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119

$4.170

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$3.753

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MKK Technologies

India . 2,203 parts In-Stock

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$7.842

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DigiPath Technology Company

USA . 2,203 parts In-Stock

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$7.842

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2,203

$7.842

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Corphita

USA . 4,495 parts In-Stock

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4,495

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Parana Technologies

USA . 1,674 parts In-Stock

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$4.986

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Overview

Unlock the power of innovation with the M36LLR8860M1ZAQF from STMicroelectronics—a leader in reliable, cutting-edge memory solutions. This versatile FLASH+PSRAM hybrid memory IC offers exceptional performance in a compact, low-profile package, perfect for advanced applications in consumer electronics, IoT devices, and automotive systems. Enjoy energy efficiency, robust reliability, and seamless integration, empowering your designs to reach new heights while ensuring long-lasting quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern electronic devices, enhancing versatility.

Package Shape: RECTANGULAR

A rectangular package shape is standard in memory ICs, providing efficiency in layout and board design.

Operating Mode: SYNCHRONOUS

Synchronous operation improves speed and efficiency, making data access faster and enhancing overall performance.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers a flexible memory solution, accommodating both high-speed access and non-volatile storage needs.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V makes this memory IC power-efficient, leading to lower energy consumption in devices.

Power Supplies (V): 1.8

Operating with a single power supply of 1.8V simplifies circuit design and reduces the number of required components.

No. of Terminals: 88

Having 88 terminals enables extensive connectivity options, accommodating complex data interfaces.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style allows for efficient space utilization on PCBs while ensuring reliable electrical performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC is suitable for varied environments, ensuring reliability under heat stress.

Organization: 16MX16

The 16MX16 organization indicates a significant memory capacity, making it ideal for data-intensive applications.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C provides versatility for use in outdoor and harsh environmental applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances solderability and improves the long-term reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient space management on circuits and improves thermal performance.

Maximum Seated Height: 1.4 mm

A low seated height of 1.4 mm aids in compact designs and allows for closer component placement on PCBs.

Width: 8 mm

Compact width keeps overall device dimensions smaller, allowing for space-saving designs in various applications.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7V expands compatibility with battery-powered devices, optimizing power usage.

Length: 10 mm

The 10 mm length is ideal for various applications where size constraints are critical without sacrificing performance.

Technology: CMOS

CMOS technology enhances power efficiency and performance, making the IC suitable for low-power applications.

Terminal Form: BALL

Ball terminal form allows for easy mounting and soldering, ensuring reliable connections with minimal thermal stress.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA provides adequate power for high-performance applications without causing overheating.

No. of Words: 16777216 words

This large word count indicates significant data storage capacity, suitable for applications requiring extensive memory.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, enhancing system performance in various applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for high-density mounting, making it suitable for modern compact electronic devices.

No. of Words Code: 16M

The capacity of 16 million words signifies substantial memory, suitable for complex data handling and storage needs.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V provides flexibility in power supply options while ensuring stable performance.

Memory Density: 268435456 bit

A memory density of 268,435,456 bits represents high storage capability, catering to various applications requiring extensive memory.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit highlights its essential role in data storage solutions across various technologies.

Maximum Standby Current: 0.00011 Amp

Low maximum standby current of 0.00011 A contributes to energy efficiency, especially in low-power applications and battery-operated devices.

Technical Specifications

Other Function Memory ICs M36LLR8860M1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860M1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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