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SN74HC670N3

Texas Instruments

SN74HC670N3 by Texas Instruments

SN74HC670N3 by Texas Instruments is a CMOS memory IC with 16 terminals, operating b/w -40°C to 85°C. It has power supplies of 2-6V and comes in an industrial-grade rectangular package suitable for various applications requiring other function memory ICs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,910 parts In-Stock

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7,910

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Digiode

USA . 860 parts In-Stock

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860

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Distributors (Availability)

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Parana Technologies

USA . 1,726 parts In-Stock

1+ parts

$3.591

100+ parts

-

1k+ parts

$4.109

10k+ parts

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1,726

$3.591

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$4.109

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DigiPath Technology Company

USA . 201 parts In-Stock

1+ parts

$3.954

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201

$3.954

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ChromeModa Solutions

Germany . 4,593 parts In-Stock

1+ parts

$4.035

100+ parts

$3.309

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4,593

$4.035

$3.309

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IDEA Electronic Components Group

UK . 286 parts In-Stock

1+ parts

$4.035

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$3.632

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286

$4.035

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$3.632

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AZTECH Wire

Italy . 788 parts In-Stock

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$7.708

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788

$7.708

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One Stop Electronics

USA . 995 parts In-Stock

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$18.000

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995

$18.000

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Corphita

USA . 3,867 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the SN74HC670N3 by Texas Instruments. Known for their top-notch quality and cutting-edge technology, Texas Instruments delivers exceptional performance in the category of Other Function Memory ICs. This versatile IC offers reliability, efficiency, and precision, making it the perfect choice for a wide range of applications. Whether you're working on consumer electronics, industrial automation, or telecommunications, this product provides value, benefits, and advantages that will take your project to the next level. Elevate your designs with the SN74HC670N3 and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, making it suitable for a variety of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and helps in efficient use of space on the PCB.

Power Supplies (V): 2/6

The product can operate within a wide range of voltage supplies (2V to 6V), providing flexibility in different power scenarios.

No. of Terminals: 16

With 16 terminals, this product offers versatile connectivity options and can support complex circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style allows for easy integration into existing setups and facilitates efficient routing of connections on the PCB.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C enables reliable performance in demanding industrial environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that the product can function effectively even in extreme cold conditions.

Terminal Position: DUAL

The dual terminal position allows for secure and stable connections, enhancing the product's reliability in various applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the product can withstand harsh operating conditions typically found in industrial settings.

Technology: CMOS

The CMOS technology used in the product offers low power consumption, high speed, and reliable performance, making it a suitable choice for memory IC applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides ease of soldering and ensures mechanical stability on the PCB, making installation and maintenance hassle-free.

Terminal Pitch: 2.54 mm

The 2.54mm terminal pitch allows for easy and precise placement on the PCB, enabling efficient circuit layout and connections.

Technical Specifications

Other Function Memory ICs SN74HC670N3 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74HC670N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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