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M36LLR8760D1ZAQF

STMicroelectronics

M36LLR8760D1ZAQF by STMicroelectronics

M36LLR8760D1ZAQF by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact electronic applications. With its grid array design and fine pitch, it ensures efficient space utilization in modern devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 6,310 parts In-Stock

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6,310

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Vyrian

USA . 2,972 parts In-Stock

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2,972

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Anansix

USA . 307 parts In-Stock

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307

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IDEA Electronic Components Group

UK . 1,236 parts In-Stock

1+ parts

$4.987

100+ parts

-

1k+ parts

$4.489

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1,236

$4.987

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$4.489

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MKK Technologies

India . 2,157 parts In-Stock

1+ parts

$9.378

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2,157

$9.378

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DigiPath Technology Company

USA . 2,157 parts In-Stock

1+ parts

$9.378

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2,157

$9.378

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Corphita

USA . 6,995 parts In-Stock

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6,995

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Parana Technologies

USA . 1,479 parts In-Stock

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$5.963

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1,479

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$5.963

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Overview

Unlock the potential of your projects with the M36LLR8760D1ZAQF from STMicroelectronics, a leader in innovative memory solutions. This versatile Flash+PSRAM memory IC delivers exceptional performance, ideal for applications ranging from IoT devices to advanced consumer electronics. Designed with precision and reliability, it ensures low power consumption without compromising speed, giving you the edge in efficiency and longevity. Experience seamless integration and superior quality that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

The surface mount capability allows for compact design and ease of integration into modern electronic circuits, maximizing space efficiency on PCBs.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for efficient use of space and simplifies the design of circuit boards.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enhances performance in applications where speed is critical, providing rapid data access.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM provides versatile memory options, accommodating different data storage and speed requirements.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V allows for lower power consumption, making it energy-efficient for battery-operated devices.

Power Supplies (V): 1.8

Operating at 1.8V means reduced power draw, which is critical for saving energy in portable and low-power applications.

No. of Terminals: 88

Having 88 terminals allows for extensive connectivity options, which supports complex interfacing with other components.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style promotes a low profile design, reducing the overall height of the assembly and enabling densely packed layouts.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this memory IC is suitable for a wide range of environments, ensuring reliability under various conditions.

Organization: 16MX16

The 16MX16 organization enables efficient data structuring, enhancing data retrieval and processing capabilities.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C makes this IC suitable for applications in cold climates, broadening its usability.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish provides excellent solderability and improved reliability, ensuring better long-term performance.

Terminal Position: BOTTOM

The bottom terminal position facilitates better heat dissipation and improves mounting on PCBs for compact designs.

Maximum Seated Height: 1.4 mm

A maximum height of 1.4 mm ensures compatibility with low-profile applications, making it an excellent choice for space-constrained environments.

Width: 8 mm

The 8 mm width strikes a balance between connectivity and compactness, ideal for high-density designs.

Minimum Supply Voltage (Vsup): 1.7 V

Operating down to 1.7V enhances its adaptability in various circuits, allowing for flexibility in design.

Length: 10 mm

The 10 mm length contributes to its compact form factor, making it suitable for mobile and portable applications.

Technology: CMOS

CMOS technology ensures low power consumption and high scalability, enabling integration into advanced systems.

Terminal Form: BALL

Ball terminal form eases soldering processes and improves electrical performance, ensuring robust connections.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA indicates suitable usage in moderate-performance applications without excessive power draw.

No. of Words: 16777216 words

With a capacity of 16,777,216 words, this IC provides substantial storage, suitable for various memory-intensive applications.

Memory Width: 16

The 16-bit memory width allows for efficient data processing and improved performance in handling complex data sequences.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm enables finer placement on lower-density boards, promoting miniaturization.

No. of Words Code: 16M

This specification confirms the product's sizeable memory capacity, supporting a range of applications from small devices to more complex systems.

Maximum Supply Voltage (Vsup): 1.95 V

Supporting a maximum voltage of 1.95V permits flexibility in power supply design, allowing for slight variations in the power source.

Memory Density: 268435456 bit

With a memory density of 268,435,456 bits, this IC can store vast amounts of data, making it suitable for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it serves essential roles in devices, including storage, buffering, and data processing, making it versatile.

Maximum Standby Current: 0.00011 Amp

A maximum standby current of 0.00011 Amps signifies low energy consumption in idle states, enhancing the overall energy efficiency for battery-operated devices.

Technical Specifications

Other Function Memory ICs M36LLR8760D1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760D1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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