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M36W216BI70ZA1

STMicroelectronics

M36W216BI70ZA1 by STMicroelectronics

M36W216BI70ZA1 by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at 3V and supports a max temp of 70 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,698 parts In-Stock

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3,698

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Vyrian

USA . 1,784 parts In-Stock

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1,784

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Anansix

USA . 479 parts In-Stock

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479

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 691 parts In-Stock

1+ parts

$4.725

100+ parts

-

1k+ parts

$4.253

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691

$4.725

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$4.253

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MKK Technologies

India . 929 parts In-Stock

1+ parts

$8.885

100+ parts

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929

$8.885

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DigiPath Technology Company

USA . 929 parts In-Stock

1+ parts

$8.885

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929

$8.885

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Parana Technologies

USA . 197 parts In-Stock

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$5.650

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197

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$5.650

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Corphita

USA . 83 parts In-Stock

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83

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Overview

Unlock limitless potential with the M36W216BI70ZA1 from STMicroelectronics, a leader in innovative memory solutions. This high-performance mixed memory IC combines FLASH and SRAM technologies for seamless operation, making it ideal for demanding applications like consumer electronics and industrial systems. Experience unmatched reliability, efficiency, and exceptional temperature resilience, all backed by STMicroelectronics' commitment to quality and excellence. Elevate your designs with the power of advanced memory solutions that deliver superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material offers excellent insulation properties and mechanical durability, making the product suitable for various environments.

Surface Mount: YES

Surface mount technology provides a compact size, allowing for higher density in circuit board designs and better utilization of space.

Package Shape: RECTANGULAR

A rectangular package shape is optimal for efficient layout on printed circuit boards, contributing to improved signal integrity.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler control logic and can lead to reduced system complexity in applications.

Mixed Memory Type: FLASH+SRAM

The combination of Flash and SRAM in this memory IC allows for versatile applications that require both fast access and non-volatile memory, enhancing functionality.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3 V is compatible with a wide range of modern electronic devices, ensuring ease of integration.

Power Supplies (V): 3

Offering compatibility with 3 V power supplies maximizes design flexibility and simplifies the power architecture.

No. of Terminals: 66

Having 66 terminals facilitates a complex connection and integration into advanced circuitry, supporting high functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array style with low profile and fine pitch enables higher pin density, making it suitable for high-performance applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this product is capable of functioning in moderately high-temperature environments without performance degradation.

Organization: 1MX16

The organization of 1MX16 provides a structured data layout that supports efficient data access and storage.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C ensures reliable performance in standard environmental conditions.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

The terminal finish enhances solderability and long-term reliability of connections, which is critical in high-reliability applications.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates optimal PCB layout and better thermal performance.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm allows for a low-profile design while maintaining adequate electrical performance.

Width: 8 mm

The width of 8 mm allows for space-efficient designs in compact electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

This flexibility in supply voltage ensures compatibility with a variety of power sources in different applications.

Length: 12 mm

A length of 12 mm strikes a balance between providing necessary connections and maintaining overall device compactness.

Temperature Grade: COMMERCIAL

Rated for commercial temperatures, this IC is suitable for a wide range of consumer and industrial applications.

Technology: CMOS

CMOS technology contributes to low power consumption and high density, making this memory IC energy-efficient.

Terminal Form: BALL

The ball terminal form enhances solder joint robustness and contributes to improved thermal performance.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA allows for efficient power management, making it suitable for battery-operated devices.

No. of Words: 1048576 words

With 1,048,576 words of storage, this IC provides ample memory capacity for diverse data applications.

Memory Width: 16

A memory width of 16 bits allows for fast data transfer, improving overall system performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch enables fine-pitch mounting on PCBs, crucial for compact designs.

No. of Words Code: 1M

Support for 1M words is ideal for applications requiring moderate data storage without sacrificing performance.

Maximum Supply Voltage (Vsup): 3.3 V

This offers flexibility for devices that may require slightly higher voltage, catering to a wider range of electronic applications.

Memory Density: 16777216 bit

A memory density of 16 megabits provides substantial storage, suitable for applications where memory size is critical.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this product is optimized for high-speed data access and reliable performance.

Maximum Standby Current: 0.00001 Amp

A very low maximum standby current ensures energy efficiency, ideal for battery-powered devices needing extended life.

Maximum Access Time: 70 ns

With an access time of 70 ns, it supports high-speed operations, making it an excellent choice for performance-critical applications.

Technical Specifications

Other Function Memory ICs M36W216BI70ZA1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI70ZA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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