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5962-9564302QXA

Texas Instruments

5962-9564302QXA by Texas Instruments

Texas Instruments' 5962-9564302QXA is a MILITARY-grade VIDEO DRAM IC with 256KX16 organization, 4194304 bit memory density, and 70 ns access time. It operates b/w -55 to 125 °C and has a max supply current of 225 mA. Ideal for applications requiring high-speed video memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,817 parts In-Stock

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4,817

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Digiode

USA . 4,201 parts In-Stock

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4,201

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 161 parts In-Stock

1+ parts

$4.219

100+ parts

-

1k+ parts

$4.655

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161

$4.219

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$4.655

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DigiPath Technology Company

USA . 2,174 parts In-Stock

1+ parts

$4.646

100+ parts

$4.274

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-

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2,174

$4.646

$4.274

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ChromeModa Solutions

Germany . 297 parts In-Stock

1+ parts

$4.741

100+ parts

$3.888

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297

$4.741

$3.888

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IDEA Electronic Components Group

UK . 208 parts In-Stock

1+ parts

$4.741

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-

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$4.267

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208

$4.741

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$4.267

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AZTECH Wire

Italy . 855 parts In-Stock

1+ parts

$19.251

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855

$19.251

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One Stop Electronics

USA . 559 parts In-Stock

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$20.000

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559

$20.000

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Native Components

USA . 805 parts In-Stock

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$26.885

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805

$26.885

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Northwest PG Solutions

USA . 1,310 parts In-Stock

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$29.573

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$26.616

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1,310

$29.573

$26.616

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Corphita

USA . 292 parts In-Stock

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292

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Overview

Elevate your projects with the top-notch quality and reliability of Texas Instruments' 5962-9564302QXA. Designed for exceptional performance in a wide range of applications, this memory IC boasts cutting-edge technology and military-grade durability. With 256Kx16 organization and a memory density of 4194304 bits, this product offers unparalleled value and benefits to customers seeking high-speed data processing and storage solutions. Trust Texas Instruments to deliver superior products that meet your demanding requirements.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides good thermal conductivity and reliability, making it suitable for military and high temperature applications.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage ensures consistent performance of the memory IC.

Organization: 256KX16

Large organization allows for storing and accessing a significant amount of data efficiently.

Temperature Grade: MILITARY

Military grade temperature rating ensures reliability and performance in harsh environmental conditions.

Maximum Access Time: 70 ns

Fast access time enables quick retrieval of data, making the memory IC suitable for high-speed applications.

Technical Specifications

Other Function Memory ICs 5962-9564302QXA attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

S-XPGA-P68

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

68

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256KX16

Package Body Material:

CERAMIC

Package Code:

PGA

Package Equivalence Code:

PGA68,9X9

Package Shape:

Package Style (Meter):

GRID ARRAY

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Standby Current:

.012 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

225 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Trade Compliance

5962-9564302QXA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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