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M36W108T100ZM5

STMicroelectronics

M36W108T100ZM5 by STMicroelectronics

M36W108T100ZM5 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 1M x 8 organization with mixed FLASH+SRAM technology. It operates b/w -20 °C to 85°C and supports power supplies of 2.7V to 3.6V. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,063 parts In-Stock

1+ parts

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3,063

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Digiode

USA . 2,208 parts In-Stock

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2,208

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Anansix

USA . 2,146 parts In-Stock

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2,146

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 521 parts In-Stock

1+ parts

$4.119

100+ parts

-

1k+ parts

$3.707

10k+ parts

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521

$4.119

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$3.707

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MKK Technologies

India . 2,214 parts In-Stock

1+ parts

$7.745

100+ parts

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2,214

$7.745

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DigiPath Technology Company

USA . 2,214 parts In-Stock

1+ parts

$7.745

100+ parts

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2,214

$7.745

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Corphita

USA . 4,412 parts In-Stock

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4,412

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Parana Technologies

USA . 204 parts In-Stock

1+ parts

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100+ parts

$4.925

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204

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$4.925

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Overview

Unlock unparalleled performance with the M36W108T100ZM5 from STMicroelectronics, a leader in innovative memory solutions. This advanced Flash+SRAM device is designed for reliability and efficiency, catering to various applications from consumer electronics to industrial systems. With its low-profile design and robust temperature range, it promises seamless integration and superior power management. Elevate your projects with ST's commitment to quality and innovation—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, making this IC reliable for various applications.

Surface Mount: YES

Surface mount technology allows for a smaller footprint and easier integration into modern circuit boards, optimizing space and efficiency.

Package Shape: RECTANGULAR

The rectangular shape is well-suited for efficient PCB layouts, facilitating better organization and connectivity.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing, allowing for simpler designs and potentially faster response in certain applications.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM offers both non-volatile storage and fast access, suitable for a wide range of memory management needs.

Power Supplies (V): 3/3.3

Operating at 3V and 3.3V increases compatibility with various power systems, making it versatile for numerous applications.

No. of Terminals: 48

With 48 terminals, this IC provides ample interface options for robust connectivity and functionality in complex systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low profile grid array design minimizes height while maximizing performance, perfect for compact electronic devices.

Maximum Operating Temperature: 85 °C

Capable of operating at temperatures up to 85 °C makes this IC suitable for industrial and automotive applications where heat resilience is critical.

Organization: 1MX8

The 1MX8 organization enables efficient data structuring, enhancing the effectiveness of data retrieval and storage.

Minimum Operating Temperature: -20 °C

With a minimum operating temperature of -20 °C, this IC can function in cold environments, broadening its application range.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides excellent solderability and reliability in connections, crucial for long-term performance in electronic devices.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient integration into multi-layer boards, improving design complexity without sacrificing performance.

Maximum Seated Height: 1.35 mm

The low seated height of 1.35 mm is ideal for space-constrained designs and keeps the assembly compact.

Width: 9.8 mm

The 9.8 mm width balances space efficiency with ease of handling during assembly and testing.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V allows flexibility in design, compatible with a variety of lower-power systems.

Length: 11.8 mm

The length of 11.8 mm contributes to the compact design while ensuring functionality and performance are maintained.

Technology: CMOS

Using CMOS technology ensures lower power consumption and higher noise immunity, making it efficient for battery-powered devices.

Terminal Form: BALL

Ball terminals offer better reliability in soldering and are widely used in modern electronic assemblies, ensuring stronger connections.

Maximum Supply Current: 100 mA

With a maximum supply current of 100 mA, this IC can handle substantial loads, functioning effectively in demanding applications.

No. of Words: 1048576 words

The ability to store 1,048,576 words represents a significant data capacity, suitable for applications requiring substantial memory.

Memory Width: 8

An 8-bit memory width allows efficient data handling and is compatible with most microcontrollers and processors.

Terminal Pitch: 1 mm

The 1 mm terminal pitch is standard for many devices, allowing easy integration with existing PCB layouts and designs.

No. of Words Code: 1M

A storage capacity of 1M words ensures the IC is capable of handling large datasets, ideal for high-performance applications.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V allows the IC to operate efficiently while supporting a wide range of applications.

Memory Density: 8388608 bit

At a memory density of 8 megabits, this IC is suitable for high-density applications, providing ample storage in a compact form.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type makes this IC integral for any system needing reliable and efficient data storage.

Maximum Standby Current: 0.00002 Amp

A minimal standby current of 0.00002 A indicates excellent power efficiency, valuable for battery-operated devices where power conservation is crucial.

Maximum Access Time: 100 ns

The 100 ns maximum access time ensures fast read/write operations, enhancing overall system performance and responsiveness.

Technical Specifications

Other Function Memory ICs M36W108T100ZM5 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZM5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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