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M36W216T85ZA6

STMicroelectronics

M36W216T85ZA6 by STMicroelectronics

M36W216T85ZA6 by STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage and operates b/w -40 °C to 85 °C. It features a 1M x 16 organization and comes in a compact grid array package. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,034 parts In-Stock

1+ parts

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4,034

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Vyrian

USA . 2,802 parts In-Stock

1+ parts

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1k+ parts

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2,802

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Anansix

USA . 531 parts In-Stock

1+ parts

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531

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,765 parts In-Stock

1+ parts

$2.132

100+ parts

-

1k+ parts

$1.918

10k+ parts

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1,765

$2.132

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$1.918

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MKK Technologies

India . 365 parts In-Stock

1+ parts

$4.008

100+ parts

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365

$4.008

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DigiPath Technology Company

USA . 365 parts In-Stock

1+ parts

$4.008

100+ parts

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365

$4.008

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Corphita

USA . 1,042 parts In-Stock

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1,042

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Parana Technologies

USA . 527 parts In-Stock

1+ parts

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100+ parts

$2.549

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527

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$2.549

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Overview

Elevate your design with the M36W216T85ZA6 from STMicroelectronics, a trusted leader in memory solutions. This high-quality asynchronous memory IC is engineered for versatility and reliability, thriving even in extreme temperatures. With its compact, low-profile package, it offers seamless integration for industrial applications. Experience enhanced performance and efficiency that empower your projects, ensuring durability and longevity without compromise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and resistance to environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface mount technology allows for smaller circuit board designs, enhancing the efficiency of space usage in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout and placement on PCB, ensuring a compact design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in memory access, improving overall system performance.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3V ensures compatibility with a wide range of modern digital circuits.

No. of Terminals: 66

With 66 terminals, this IC offers numerous connections for enhanced functionality in complex circuits.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile grid array design reduces height and footprint, making this IC an excellent choice for space-constrained applications.

Maximum Operating Temperature: 85 °C

Operating at a maximum temperature of 85 °C ensures reliability in high-temperature environments.

Organization: 1MX16

The 1MX16 organization provides a balanced memory structure, making it suitable for various data storage applications.

Minimum Operating Temperature: -40 °C

Range from -40 °C to 85 °C makes this product ideal for harsh environmental conditions, ensuring consistent performance.

Terminal Position: BOTTOM

Bottom terminal positioning aids in effective thermal management and better electrical performance.

Maximum Seated Height: 1.4 mm

With a seated height of 1.4mm, it fits well in low-height designs while maintaining electrical integrity.

Width: 8 mm

A width of 8mm allows for efficient placement alongside other components on a PCB.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V enhances compatibility with numerous devices, maximizing application versatility.

Length: 12 mm

The 12mm length contributes to overall size efficiency, important for compact electronic designs.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures robustness and reliability in demanding environments.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, increasing overall system efficiency.

Terminal Form: BALL

The ball terminal form allows for better soldering and connection reliability in modern assembly processes.

No. of Words: 1048576 words

With over a million words available, this memory IC can handle substantial data storage needs.

Memory Width: 16

A memory width of 16 bits provides a good balance between speed and storage capacity.

Terminal Pitch: 0.8 mm

An 0.8 mm pitch allows for a compact design while maintaining ease of manufacturing and assembly.

No. of Words Code: 1M

The 1M word code signifies a powerful storage capability for a range of applications, making the IC versatile.

Maximum Supply Voltage (Vsup): 3.3 V

The maximum supply voltage of 3.3 V ensures compatibility with various power supplies while addressing efficiency.

Memory Density: 16777216 bit

High memory density of 16 Megabits enables extensive data storage options, suitable for demanding applications.

Memory IC Type: MEMORY CIRCUIT

Being categorized as a memory circuit underscores its primary function in data storage and retrieval, essential for modern electronics.

Technical Specifications

Other Function Memory ICs M36W216T85ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216T85ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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