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MR0A08BYS35

Everspin Technologies

MR0A08BYS35 by Everspin Technologies

MR0A08BYS35 by Everspin: 128KX8 memory IC with 3.3V supply, 35ns access time, and 1048576 bit density. Ideal for commercial applications requiring fast asynchronous operation in a small outline package.

Median Price

$20.100

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Mouser Electronics

USA . 405 parts In-Stock

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$20.100

100+ parts

$16.990

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$16.560

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405

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$16.560

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Nova Conductors

Japan . 22 parts In-Stock

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$12.333

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Vyrian

USA . 8,854 parts In-Stock

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8,854

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Chip Stock

USA . 188 parts In-Stock

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Cogito LLC

Ukraine . 4 parts In-Stock

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Semi Source

USA . 2 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$12.333

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AZTECH Wire

Italy . 718 parts In-Stock

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$18.469

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Overview

Everspin Technologies offers the MR0A08BYS35, a top-of-the-line MEMORY CIRCUIT designed for optimal performance and reliability. This innovative product caters to a wide range of applications, providing customers with a versatile solution for their memory needs. With a sleek design and advanced technology, this MEMORY CIRCUIT stands out among the competition. Experience seamless operation and enhanced efficiency with the MR0A08BYS35, setting new standards in the industry. Choose Everspin Technologies for unparalleled quality and value.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Offers a lightweight and durable housing for the memory IC, ensuring longevity and ease of handling.

Surface Mount

YES - Allows for easy installation and integration into electronic devices, saving time and effort during assembly.

Package Shape

RECTANGULAR - Provides a standardized form factor that is compatible with a wide range of applications and mounting configurations.

Operating Mode

ASYNCHRONOUS - Enables independent operation of the memory IC, enhancing flexibility and performance in various system designs.

Nominal Supply Voltage / Vsup (V)

3.3 - Operates at a reliable and efficient voltage level, optimizing power consumption and overall system stability.

Power Supplies (V)

3.3 - Ensures consistent power delivery to the memory IC, reducing the risk of voltage fluctuations and potential damage.

No. of Terminals

44 - Offers a sufficient number of connection points for seamless connectivity and data transfer within the system.

Package Style (Meter)

SMALL OUTLINE, THIN PROFILE - Occupies minimal space while delivering high memory capacity, making it ideal for compact device designs.

Maximum Operating Temperature

70 °C - Provides a wide temperature range for operation, ensuring reliability and performance in diverse environmental conditions.

Organization

128KX8 - Organized in a convenient format for storing and accessing data efficiently, enhancing overall system speed and functionality.

Technical Specifications

Other Function Memory ICs MR0A08BYS35 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MR0A08BYS35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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