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SN74HC670N

Texas Instruments

SN74HC670N by Texas Instruments

SN74HC670N by Texas Instruments is a CMOS memory IC with 16 terminals and operating temperature range of -40 to 85°C. It has power supplies of 2/6V, suitable for industrial applications requiring reliable memory functions in an IN-LINE package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,392 parts In-Stock

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Digiode

USA . 1,697 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 704 parts In-Stock

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704

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Parana Technologies

USA . 1,301 parts In-Stock

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$3.522

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$4.046

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$3.522

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DigiPath Technology Company

USA . 497 parts In-Stock

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$3.878

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497

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ChromeModa Solutions

Germany . 6,032 parts In-Stock

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$3.957

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$3.245

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6,032

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IDEA Electronic Components Group

UK . 2,192 parts In-Stock

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$3.957

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$3.561

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$3.561

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AZTECH Wire

Italy . 258 parts In-Stock

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$5.968

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One Stop Electronics

USA . 343 parts In-Stock

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Corphita

USA . 2,595 parts In-Stock

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Overview

Unlock the power of efficient memory management with the Texas Instruments SN74HC670N. Built with quality and precision by a trusted manufacturer, this memory IC offers a range of applications in various industries. From industrial automation to consumer electronics, this versatile component provides reliable performance and durability. Experience seamless integration and enhanced functionality with the SN74HC670N, delivering value and convenience to customers seeking top-notch memory solutions. Trust Texas Instruments for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the memory IC, making it suitable for industrial use.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices and circuit layouts.

Power Supplies (V): 2/6

Support for both 2V and 6V power supplies gives flexibility in different power supply scenarios.

No. of Terminals: 16

With 16 terminals, this memory IC can handle a larger amount of data and connections efficiently.

Package Style: IN-LINE

In-line package style saves space and provides a streamlined design for compact electronic devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures reliable performance even in demanding industrial environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40°C allows for usage in a wide range of temperature conditions.

Terminal Position: DUAL

Dual terminal position enhances connectivity and ensures stable data transfer within the memory IC.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating signifies that this memory IC can withstand harsh operating conditions in industrial settings.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance for efficient data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections for long-term usage of the memory IC.

Terminal Pitch: 2.54 mm

Standard terminal pitch of 2.54mm allows for compatibility with commonly used connectors and circuit boards.

Technical Specifications

Other Function Memory ICs SN74HC670N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74HC670N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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