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MR256A08BCMA35R

Everspin Technologies

MR256A08BCMA35R by Everspin Technologies

MR256A08BCMA35R by Everspin Technologies is a 32KX8 MEMORY CIRCUIT with 262144 bit Memory Density. Operating at 3.3V, it has a Max Access Time of 35ns and Industrial Temperature Grade. Suitable for applications requiring low profile, fine pitch GRID ARRAY packages in industrial environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,012 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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AZTECH Wire

Italy . 792 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Everspin Technologies presents the MR256A08BCMA35R, a cutting-edge Memory IC designed to revolutionize data storage solutions. With a focus on quality and reliability, Everspin Technologies ensures that this product meets the highest standards in the industry. Ideal for a wide range of applications, this memory circuit offers unparalleled performance and efficiency. Experience the value and benefits of the MR256A08BCMA35R, providing customers with a superior solution for their memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components.

Surface Mount: YES

Easy to install and saves space on the PCB.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without synchronization signals.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with commonly used supply voltages in electronic devices.

Organization: 32KX8

Optimal organization for data storage and retrieval efficiency.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with varying temperatures.

Technology: CMOS

Low power consumption and high noise immunity.

Memory IC Type: MEMORY CIRCUIT

Specifically designed for storing and retrieving digital data.

Technical Specifications

Other Function Memory ICs MR256A08BCMA35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

S-PBGA-B48

Length:

8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MR256A08BCMA35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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