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MR256A08BSO35R

Everspin Technologies

MR256A08BSO35R by Everspin Technologies

MR256A08BSO35R by Everspin Tech is a 32Kx8 memory IC with CMOS tech. Operating at 3.3V, it has a max access time of 35ns and standby current of 0.007Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,493 parts In-Stock

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Nova Conductors

Japan . 29 parts In-Stock

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AZTECH Wire

Italy . 802 parts In-Stock

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$19.215

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802

$19.215

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the MR256A08BSO35R by Everspin Technologies. As a leading manufacturer in the industry, Everspin Technologies delivers cutting-edge memory ICs that excel in various applications. This high-quality product offers customers exceptional value, benefits, and advantages, making it the ideal choice for your electronic needs. Trust Everspin Technologies to provide you with top-of-the-line technology that sets you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the memory IC, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with common power supply standards, making it versatile for various applications.

No. of Terminals: 32

Provides a sufficient number of connection points for efficient data transfer and communication.

Maximum Operating Temperature: 70 °C

Can withstand high operating temperatures, ensuring stable performance in challenging environments.

Organization: 32KX8

Offers a balanced memory organization for optimal data storage and retrieval capabilities.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, enhancing energy efficiency.

Memory Density: 262144 bit

Provides ample storage capacity for storing a large amount of data and information.

Maximum Access Time: 35 ns

Delivers fast access times for quick data retrieval and efficient processing of information.

Technical Specifications

Other Function Memory ICs MR256A08BSO35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G32

Length:

20.726 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP32,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.54 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.25 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.505 mm

Trade Compliance

MR256A08BSO35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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