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MR256A08BCYS35R

Everspin Technologies

MR256A08BCYS35R by Everspin Technologies

MR256A08BCYS35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact package.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 9,630 parts In-Stock

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AZTECH Wire

Italy . 593 parts In-Stock

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Bastille Electronics

Australia . 78 parts In-Stock

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Overview

Everspin Technologies' MR256A08BCYS35R offers cutting-edge performance and reliability in the realm of memory ICs. With a focus on quality and innovation, Everspin Technologies brings you a product that exceeds expectations in various industrial applications. Whether you're looking to enhance data storage or improve system efficiency, this memory circuit provides the value and advantages needed to take your projects to the next level. Trust Everspin Technologies for top-of-the-line solutions that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the memory IC, ensuring long-lasting performance.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data retrieval, making the memory IC suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V ensures compatibility with standard power supplies and reduces the risk of overloading.

No. of Terminals: 44

Having a higher number of terminals allows for more connectivity options and versatility in circuit design.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature ranges, ensuring reliable performance in harsh environments.

Memory Width: 8

With a memory width of 8 bits, this memory IC can handle and process data efficiently, making it suitable for various computing tasks.

Memory Density: 262144 bit

The high memory density allows for storing a large amount of data in a compact form factor, ideal for applications requiring extensive storage capacity.

Maximum Access Time: 35 ns

The fast access time ensures quick retrieval of data, leading to improved system performance and responsiveness.

Technical Specifications

Other Function Memory ICs MR256A08BCYS35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MR256A08BCYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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