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MR256D08BMA45

Everspin Technologies

MR256D08BMA45 by Everspin Technologies

MR256D08BMA45 by Everspin Technologies is a 32KX8 memory circuit with a density of 262144 bits. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 45ns. This memory IC is suitable for various applications requiring high-speed data storage and retrieval.

Median Price

$6.383

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Nova Conductors

Japan . 80 parts In-Stock

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$6.383

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Vyrian

USA . 5,990 parts In-Stock

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5,990

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$6.383

100+ parts

$6.255

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AZTECH Wire

Italy . 628 parts In-Stock

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$12.809

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iodParts Technologies Inc.

India . 6,189 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kepictronics

USA . 1,380 parts In-Stock

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Futuretech Components

Singapore . 880 parts In-Stock

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880

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Perfect Parts

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Overview

Everspin Technologies presents the MR256D08BMA45, a revolutionary memory circuit that offers unbeatable quality and advantages. As a leading manufacturer in the industry, Everspin Technologies ensures top-notch performance and reliability. The MR256D08BMA45 belongs to the category of Other Function Memory ICs, providing endless applications for various fields. This product brings immense value to customers with its exceptional benefits and advantages. With a nominal supply voltage of 3.3V and maximum operating temperature of 70°C, this memory circuit delivers optimal performance. Discover the power of the MR256D08BMA45 and elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the memory IC, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Allows for independent operation and communication with other devices, enhancing flexibility in usage.

Maximum Operating Temperature: 70 °C

Ensures reliable performance even in high-temperature environments.

Memory Density: 262144 bit

Offers ample storage capacity for data and information.

Maximum Access Time: 45 ns

Provides fast access to data, improving overall performance of the memory IC.

Technical Specifications

Other Function Memory ICs MR256D08BMA45 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

S-PBGA-B48

Length:

8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

MR256D08BMA45 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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