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MR256A08BCYS35

Everspin Technologies

MR256A08BCYS35 by Everspin Technologies

MR256A08BCYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, with a max access time of 35ns. This industrial-grade IC is ideal for applications requiring fast and reliable memory storage in compact spaces.

Median Price

$10.946

Lifecycle Status

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Arrow

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USA . 75 parts In-Stock

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DigiKey

USA . 270 parts In-Stock

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$9.990

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Nova Conductors

Japan . 100 parts In-Stock

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NAC Semi

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AZTECH Wire

Italy . 439 parts In-Stock

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Overview

Experience the next level of performance and reliability with the MR256A08BCYS35 by Everspin Technologies. As a leading manufacturer in the industry, Everspin delivers top-notch quality and cutting-edge technology in their memory ICs. The MR256A08BCYS35 is versatile and ideal for a wide range of applications, providing seamless operation and efficiency. With its advanced features and innovative design, this product offers exceptional value and benefits to customers, making it a smart choice for all your memory circuit needs. Unlock the potential of your devices with Everspin Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product durable and lightweight, ideal for various applications.

Surface Mount: YES

With surface mount capability, this product offers easy installation and space-saving benefits in electronic designs.

Package Shape: RECTANGULAR

The rectangular design of this package allows for efficient use of board space and easy integration into circuit layouts.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures flexibility and reliability in data transfer processes, making this product versatile for different systems.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides stable power to the memory IC, ensuring consistent performance in various operating conditions.

Power Supplies (V): 3.3

With a nominal power supply of 3.3V, this product offers energy efficiency and compatibility with standard power sources.

No. of Terminals: 44

The 44 terminals provide ample connectivity options for interfacing with other components, enhancing the product's versatility in circuit design.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile of this package style save space on PCBs, making it suitable for compact devices and applications with size constraints.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliable performance even in challenging environmental conditions.

Organization: 32KX8

The 32KX8 organization optimizes memory storage and retrieval efficiency, enhancing the overall functionality of the memory IC.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this product is suitable for use in extreme cold environments without compromising performance.

Terminal Position: DUAL

The dual terminal position allows for secure connections and stable signal transmission, contributing to the product's reliability in circuit operation.

Maximum Seated Height: 1.2 mm

The low maximum seated height of 1.2mm enables a compact design layout and facilitates component integration in tight spaces.

Width: 10.16 mm

The 10.16mm width of this memory IC accommodates easy placement on PCBs and contributes to efficient circuit board layout.

Minimum Supply Voltage (Vsup): 3 V

The 3V minimum supply voltage requirement ensures compatibility with a wide range of power sources, enhancing the product's versatility.

Length: 18.41 mm

The 18.41mm length of this product allows for flexible placement in circuit designs and facilitates effective signal routing.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures dependable performance in demanding industrial applications with varying temperature conditions.

Technology: CMOS

The CMOS technology utilized in this memory IC offers low power consumption and high noise immunity, enhancing overall system reliability.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections and ease of assembly, ensuring robust electrical connections in circuit designs.

Maximum Supply Current: 65 mA

The 65mA maximum supply current requirement ensures efficient power management and optimal performance of the memory IC in various applications.

No. of Words: 32768 words

With 32768 words memory capacity, this product offers ample storage for data-intensive applications, increasing overall system capability.

Memory Width: 8

The 8-bit memory width facilitates fast and efficient data processing, enhancing the speed and performance of the memory IC in data transfer operations.

Terminal Pitch: 0.8 mm

The 0.8mm terminal pitch allows for precise and compact board layout, optimizing space utilization and facilitating high-density circuit designs.

No. of Words Code: 32K

The use of a 32K words code simplifies memory organization and address mapping, enhancing data management efficiency in the memory IC.

Maximum Supply Voltage (Vsup): 3.6 V

The 3.6V maximum supply voltage tolerance ensures safe operation under varying voltage conditions, enhancing the reliability of the memory IC.

Memory Density: 262144 bit

The high memory density of 262144 bits provides ample storage capacity for data-intensive applications, making this product ideal for high-performance systems.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit IC, this product offers reliable data storage and retrieval functions, making it a suitable choice for various electronic devices.

Maximum Standby Current: 0.007 Amp

With a low maximum standby current of 0.007 Amp, this memory IC minimizes power consumption in standby mode, contributing to energy efficiency in system operation.

Maximum Access Time: 35 ns

The fast 35ns maximum access time ensures quick data retrieval and processing, enhancing the responsiveness and performance of the memory IC in demanding applications.

Technical Specifications

Other Function Memory ICs MR256A08BCYS35 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

44

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

MR256A08BCYS35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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