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MR256A08BYS35R

Everspin Technologies

MR256A08BYS35R by Everspin Technologies

MR256A08BYS35R by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, has a max access time of 35ns, and consumes up to 65mA. This small outline, thin profile package is ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,841 parts In-Stock

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Nova Conductors

Japan . 46 parts In-Stock

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46

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AZTECH Wire

Italy . 281 parts In-Stock

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$19.428

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MR256A08BYS35R by Everspin Technologies. Designed for seamless integration and optimal performance, this memory IC offers unrivaled reliability and efficiency. Ideal for a wide range of applications, this product is a game-changer in the industry. Elevate your projects with the superior quality and advanced features of Everspin Technologies' MR256A08BYS35R. Experience innovation like never before with this high-performance memory circuit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material is durable and cost-effective, making this product a reliable choice for various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into compact electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and efficient data access, enhancing the overall performance of the memory IC.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with standard power sources and offers reliable performance.

No. of Terminals: 44

Having 44 terminals enables versatile connectivity options and integration with other components in a circuit.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC is suitable for a wide range of environmental conditions.

Organization: 32KX8

The 32KX8 organization offers a balance between memory capacity and data access speed, making it suitable for many applications.

Minimum Operating Temperature: 0 °C

Being able to operate at temperatures as low as 0°C ensures reliable performance in various environments and applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making this memory IC energy-efficient and reliable.

Memory Density: 262144 bit

With a memory density of 262144 bits, this memory IC offers ample storage capacity for storing data and instructions.

Maximum Access Time: 35 ns

A fast maximum access time of 35 nanoseconds ensures quick data retrieval and efficient operation of the memory IC.

Technical Specifications

Other Function Memory ICs MR256A08BYS35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

44

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

MR256A08BYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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