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MR256A08BCSO35

Everspin Technologies

MR256A08BCSO35 by Everspin Technologies

MR256A08BCSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring small outline package and asynchronous operation.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 5,609 parts In-Stock

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Nova Conductors

Japan . 77 parts In-Stock

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AZTECH Wire

Italy . 400 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Overview

Everspin Technologies brings you the MR256A08BCSO35, a high-quality Other Function Memory IC that offers unparalleled value and benefits. With a wide operating temperature range, small outline package style, and 32KX8 organization, this memory circuit is perfect for industrial applications where reliability is key. Trust Everspin Technologies to deliver cutting-edge technology with the MR256A08BCSO35, providing customers with a solution that exceeds expectations in performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the memory IC, ensuring long-lasting performance.

Surface Mount: YES

Surface mount capability makes installation and integration of the memory IC easy and efficient.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard and reliable supply voltage, ensuring stability and consistent performance.

No. of Words: 32768 words

With a large number of words, this memory IC can store a significant amount of data, making it suitable for various applications.

Maximum Access Time: 35 ns

Fast access time allows for quick retrieval of data, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs MR256A08BCSO35 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G32

Length:

20.726 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP32,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.54 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

75 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.25 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.505 mm

Trade Compliance

MR256A08BCSO35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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