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MR256A08BSO35

Everspin Technologies

MR256A08BSO35 by Everspin Technologies

MR256A08BSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for commercial applications requiring small outline package style and asynchronous operation.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,837 parts In-Stock

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Nova Conductors

Japan . 53 parts In-Stock

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AZTECH Wire

Italy . 384 parts In-Stock

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$8.309

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Perfect Parts

USA . 122 parts In-Stock

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Bastille Electronics

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Overview

Unlock the power of next-generation memory technology with the MR256A08BSO35 by Everspin Technologies. This cutting-edge Memory IC offers unparalleled reliability and performance, thanks to its innovative design and top-quality materials. Ideal for a wide range of applications, this product combines speed, efficiency, and durability to provide customers with a seamless user experience. Upgrade your system today and discover the value and benefits that this advanced Memory IC can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write operations, increasing flexibility in memory access.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures compatibility with most standard electronic systems.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options for interfacing with other components.

Maximum Operating Temperature: 70 °C

The product can operate efficiently at high temperatures, providing reliability in various environments.

Memory Density: 262144 bit

With a high memory density of 262144 bits, this memory IC can store a large amount of data efficiently.

Technical Specifications

Other Function Memory ICs MR256A08BSO35 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G32

Length:

20.726 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP32,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.54 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.25 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.505 mm

Trade Compliance

MR256A08BSO35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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