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M36LLR8760M1ZAQF

STMicroelectronics

M36LLR8760M1ZAQF by STMicroelectronics

M36LLR8760M1ZAQF by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,009 parts In-Stock

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4,009

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Digiode

USA . 3,062 parts In-Stock

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3,062

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Anansix

USA . 837 parts In-Stock

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837

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 552 parts In-Stock

1+ parts

$4.847

100+ parts

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1k+ parts

$4.363

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552

$4.847

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$4.363

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MKK Technologies

India . 1,731 parts In-Stock

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$9.115

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$9.115

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DigiPath Technology Company

USA . 1,731 parts In-Stock

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$9.115

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1,731

$9.115

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Parana Technologies

USA . 1,958 parts In-Stock

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$5.796

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1,958

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$5.796

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Corphita

USA . 394 parts In-Stock

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Overview

Unlock unparalleled performance with the M36LLR8760M1ZAQF from STMicroelectronics, a leader in innovative memory solutions. This advanced FLASH+PSRAM IC is designed for efficiency and reliability, making it perfect for a wide range of applications from IoT devices to consumer electronics. With its low power consumption and robust operating conditions, you can trust in its quality and gain a competitive edge while enhancing your products’ performance and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount capability allows for compact design and efficient utilization of PCB space, enhancing overall product performance.

Package Shape: RECTANGULAR

The rectangular shape ensures easy integration into various devices and maximizes the effective use of circuit board area.

Operating Mode: ASYNCHRONOUS

Asynchronous operation supports faster access speeds, contributing to improved performance in data processing applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers both persistent storage and fast access memory, making this chip versatile for diverse processing needs.

Nominal Supply Voltage / Vsup: 1.8 V

The low nominal supply voltage helps in power efficiency, making this product ideal for battery-operated devices.

Power Supplies (V): 1.8

Operating at 1.8 V minimizes energy consumption, which is crucial for energy-sensitive applications.

No. of Terminals: 88

Having 88 terminals facilitates advanced connectivity options, allowing for more complex designs and functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low-profile and fine pitch grid array design is excellent for high-density applications while enabling efficient thermal and electrical performance.

Maximum Operating Temperature: 85 °C

Designed to operate up to 85 °C, this IC can function effectively in high-temperature environments.

Organization: 16MX16

The 16MX16 organization provides a large data access structure, accommodating high-volume data storage needs.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C allows this memory IC to be used in cooler climates and various outdoor applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances solderability and increases reliability, ensuring long-term performance in diverse environments.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easier mounting and saves valuable space on printed circuit boards.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm contributes to a low-profile mounting that is beneficial in space-constrained applications.

Width: 8 mm

An 8 mm width is suitable for applications that require compact memory solutions without compromising reliability.

Minimum Supply Voltage (Vsup): 1.7 V

The option for lower supply voltage supports a wider range of battery configurations, enhancing device compatibility.

Length: 10 mm

A length of 10 mm maximizes space utilization while remaining easy to integrate into various device layouts.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, ideal for modern electronic devices.

Terminal Form: BALL

Ball terminal form provides robust connectivity and better thermal performance, crucial for advanced applications.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA indicates adequate power handling capabilities for demanding applications.

No. of Words: 16777216 words

Offering 16,777,216 words of memory allows for storing substantial data sets, supporting various memory-intensive applications.

Memory Width: 16

A memory width of 16 bits facilitates efficient data transfer and processing, improving overall system performance.

Terminal Pitch: 0.8 mm

0.8 mm terminal pitch is suitable for high-density designs, enabling advanced applications in limited spaces.

No. of Words Code: 16M

The 16M word capacity caters to modern data applications, making this product flexible for a wide range of uses.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95 V allows this component to function securely in various voltage environments.

Memory Density: 268435456 bit

With a density of 268,435,456 bits, this memory IC supports high-performance applications requiring extensive data storage.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit ensures that it is tailored for efficient data storage and retrieval, which is essential for many applications.

Maximum Standby Current: 0.00011 Amp

A maximum standby current of only 0.00011 A highlights energy efficiency during idle periods, making the device more efficient overall.

Technical Specifications

Other Function Memory ICs M36LLR8760M1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760M1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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