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M36LLR8860T1ZAQ

STMicroelectronics

M36LLR8860T1ZAQ by STMicroelectronics

M36LLR8860T1ZAQ by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M x 16 organization with mixed FLASH+PSRAM technology. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,416 parts In-Stock

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Anansix

USA . 2,711 parts In-Stock

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2,711

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Digiode

USA . 1,936 parts In-Stock

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1,936

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 736 parts In-Stock

1+ parts

$1.959

100+ parts

-

1k+ parts

$1.763

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736

$1.959

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$1.763

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MKK Technologies

India . 589 parts In-Stock

1+ parts

$3.683

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589

$3.683

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DigiPath Technology Company

USA . 589 parts In-Stock

1+ parts

$3.683

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589

$3.683

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Corphita

USA . 4,471 parts In-Stock

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Parana Technologies

USA . 2,226 parts In-Stock

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$2.342

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2,226

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$2.342

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Overview

Unlock the potential of your next project with the M36LLR8860T1ZAQ from STMicroelectronics, a leader in innovative semiconductor solutions. This advanced memory IC combines the reliability of FLASH and PSRAM technology, ensuring high performance while consuming minimal power. Perfect for applications demanding efficiency and speed, it delivers exceptional value with its compact design and wide operating temperature range, making it an ideal choice for everything from consumer electronics to industrial systems. Elevate your designs with unmatched quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction ensures robust performance and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into circuit boards, saving valuable space in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape is efficient for layout and design, providing optimized space usage on PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance by reducing access time, making it ideal for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM provides flexibility and superior performance for varying memory requirements in diverse applications.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V is energy-efficient, enabling longer battery life in portable devices.

Power Supplies (V): 1.8

Single power supply at 1.8V simplifies the design and reduces overall system complexity.

No. of Terminals: 88

A higher terminal count allows for more integration possibilities, supporting complex designs and higher data throughput.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch design facilitate high-density mounting, ideal for space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC can perform reliably in challenging environments.

Organization: 16MX16

This organization supports efficient data access and storage, making it effective for high-performance memory applications.

Minimum Operating Temperature: -25 °C

A wide temperature range from -25 °C ensures functionality in extreme conditions, broadening possible applications.

Terminal Finish: TIN LEAD

Tin lead finishing enhances the solderability and reliability of the connections, contributing to robust assembly.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes layout for better performance and space efficiency in board design.

Maximum Seated Height: 1.4 mm

A low seated height enables slim designs, adding versatility for compact electronic applications.

Width: 8 mm

An 8 mm width allows easy integration into a variety of form factors while maintaining space efficiency.

Minimum Supply Voltage (Vsup): 1.7 V

The ability to operate down to 1.7V enhances its usability in low-power applications, making it energy efficient.

Length: 10 mm

Standard length of 10 mm is compatible with most layouts, facilitating effortless incorporation into designs.

Technology: CMOS

CMOS technology provides low power consumption and high transistor density, making it ideal for memory ICs.

Terminal Form: BALL

Ball terminal form allows for easier assembly and better thermal performance, enhancing overall reliability.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA makes it suitable for high-performance operations while ensuring energy efficiency.

No. of Words: 16777216 words

This extensive capacity allows for significant data storage, meeting demands for large applications.

Memory Width: 16

A memory width of 16 bits supports higher data transfer rates, enhancing performance in various applications.

Terminal Pitch: 0.8 mm

With a 0.8 mm terminal pitch, this IC is suitable for modern PCBs, allowing for high-density layouts.

No. of Words Code: 16M

The 16M word code signals a significant memory capacity, able to handle complex data needs.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V allows for better energy management, useful in battery-operated devices.

Memory Density: 268435456 bits

High memory density supports extensive data applications and is ideal for modern computing needs.

Memory IC Type: MEMORY CIRCUIT

Designed as a memory circuit, it caters specifically to data storage demands, making it a suitable choice for many applications.

Maximum Standby Current: 0.00011 Amp

Low standby current ensures minimal power consumption when not in active use, extending battery life in portable devices.

Technical Specifications

Other Function Memory ICs M36LLR8860T1ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860T1ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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