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M36LLR8860B1ZAQF

STMicroelectronics

M36LLR8860B1ZAQF by STMicroelectronics

M36LLR8860B1ZAQF by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates efficiently at temperatures from -25 °C to 85 °C and supports surface mount applications. Ideal for compact devices requiring high-density memory solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,485 parts In-Stock

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4,485

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Digiode

USA . 2,552 parts In-Stock

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Anansix

USA . 1,779 parts In-Stock

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1,779

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 36 parts In-Stock

1+ parts

$2.546

100+ parts

-

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$2.291

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36

$2.546

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$2.291

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MKK Technologies

India . 947 parts In-Stock

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$4.787

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947

$4.787

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DigiPath Technology Company

USA . 947 parts In-Stock

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$4.787

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947

$4.787

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Parana Technologies

USA . 1,310 parts In-Stock

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$3.044

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1,310

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$3.044

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Corphita

USA . 803 parts In-Stock

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Overview

Unlock exceptional performance with the M36LLR8860B1ZAQF from STMicroelectronics—a leader in innovative memory solutions. This advanced hybrid FLASH and PSRAM memory IC is designed for efficiency, offering a low-power, compact design perfect for demanding applications like IoT devices and consumer electronics. Experience reliability and durability backed by STMicroelectronics' commitment to quality, ensuring your projects achieve peak performance with minimal energy consumption. Elevate your designs with unmatched value today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protects the IC from environmental factors, making it suitable for various applications.

Surface Mount: YES

Being a surface mount device allows for more efficient use of board space and facilitates automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout flexibility in PCB design, allowing for denser circuit configurations.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for higher performance and efficiency in data processing and reduces power consumption.

Mixed Memory Type: FLASH+PSRAM

Combining flash and PSRAM types enables fast data access and storage, ideal for applications requiring speed and flexibility.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low nominal supply voltage enhances energy efficiency, making it suitable for battery-powered devices.

Power Supplies (V): 1.8

The 1.8V power supply requirement further supports low-power applications, reducing overall system power consumption.

No. of Terminals: 88

A higher number of terminals provides greater connectivity options, which is essential for complex circuit designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile design allows for compact integration in space-constrained applications while maintaining high performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC can function effectively in a variety of environments without overheating.

Organization: 16MX16

The organization of 16MX16 allows for efficient data storage and retrieval, optimizing performance in data-centric applications.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C ensures functionality in cold conditions, broadening the scope of application.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances the reliability of solder joints, promoting higher performance and longevity in connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for more flexibility in PCB layout and can reduce overall thickness of assembled components.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm contributes to a low-profile design, making it suitable for slim devices.

Width: 8 mm

With an 8 mm width, this IC is compact and allows for efficient use of board real estate.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum power supply voltage of 1.7V provides flexibility in voltage management, accommodating a range of designs.

Length: 10 mm

A length of 10 mm ensures compact integration into various device designs without sacrificing performance.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making it ideal for a range of electronic applications.

Terminal Form: BALL

The ball terminal form enhances solderability and improves mechanical reliability in surface-mount technology.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA indicates efficient operation, suitable for low-power applications and designs.

No. of Words: 16777216 words

Offering 16,777,216 words of memory provides ample storage capacity for complex applications and data requirements.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling, improving overall system processing speeds.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch permits high-density connections, supporting more complex and compact PCB layouts.

No. of Words Code: 16M

The ability to address 16M words enhances the device's capability in handling extensive data sets and applications.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V allows for a dynamic range, accommodating various circuit designs and avoiding over-voltage risks.

Memory Density: 268435456 bit

The memory density of 268,435,456 bits provides significant storage capability, suitable for data-heavy applications and robust performance.

Memory IC Type: MEMORY CIRCUIT

Classifying this product as a memory circuit indicates its primary function and suitability for data storage applications.

Maximum Standby Current: 0.00011 Amp

A maximum standby current of 0.00011 A ensures minimal power draw when idle, enhancing overall energy efficiency in applications.

Technical Specifications

Other Function Memory ICs M36LLR8860B1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860B1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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