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NP8P128AE3T1760E

Micron Technology

NP8P128AE3T1760E by Micron Technology

Micron Technology's NP8P128AE3T1760E is a 16MX8 memory circuit IC with 134217728-bit density. Operating at 3V, it features synchronous mode and industrial temperature grade. With a package style of grid array and thin profile, it is suitable for applications requiring high-speed data storage and retrieval in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 17,400 parts In-Stock

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17,400

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Vyrian

USA . 2,180 parts In-Stock

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2,180

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Digiode

USA . 280 parts In-Stock

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280

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Right Parts Inc.

USA . 38 parts In-Stock

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38

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 744 parts In-Stock

1+ parts

$10.000

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744

$10.000

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AZTECH Wire

Italy . 915 parts In-Stock

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$15.640

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915

$15.640

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Corphita

USA . 940 parts In-Stock

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940

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Microchip USA

USA . 453 parts In-Stock

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453

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Elevate your electronic devices with the NP8P128AE3T1760E by Micron Technology, a top-tier manufacturer known for their superior quality and innovative technology. This memory IC is a game-changer in its category, offering unparalleled performance and reliability. Experience seamless operation and enhanced efficiency with this synchronous operating mode chip. Whether you're upgrading your gaming system or optimizing your industrial equipment, this product delivers exceptional value and benefits. Trust Micron Technology to elevate your technology experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable construction, making the product suitable for various applications.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards, enhancing the reliability of the product.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfer and processing, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard voltage requirements, ensuring compatibility with existing systems.

No. of Terminals: 64

Provides sufficient connectivity options for integration into complex electronic systems.

Maximum Operating Temperature: 85 °C

Ensures reliable operation even in high-temperature environments, increasing the product's versatility.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, enhancing the efficiency and reliability of the product.

Memory Density: 134217728 bit

Offers a high memory density, allowing for storage of large amounts of data in a compact form factor.

Technical Specifications

Other Function Memory ICs NP8P128AE3T1760E attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B64

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

NP8P128AE3T1760E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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