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Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.

Other Function Memory ICs

Available Parts 213

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Screening Level Maximum Seated Height Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Type Width Write Protection
47C16T-I/SN by Microchip Technology

47C16T-I/SN

Microchip Technology

47C16T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with an organization of 2KX8 and a memory density of 16384 bit. It operates at a nominal voltage of 5V and has a max access time of 400 ns. This memory circuit is commonly used in industrial applications requiring reliable data storage.

400 ns

R-PDSO-G8

e3

4.9 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47L04T-I/ST by Microchip Technology

47L04T-I/ST

Microchip Technology

47L04T-I/ST by Microchip Technology is a small outline, thin profile memory IC with EEPROM+SRAM mixed memory type. Operating in synchronous mode, it offers 512x8 organization and 4096-bit memory density. Ideal for industrial applications requiring fast access times at temperatures ranging from -40 to 85°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47L16-E/P by Microchip Technology

47L16-E/P

Microchip Technology

47L16-E/P by Microchip Technology is a 2KX8 EEPROM+SRAM memory IC with 16384 bit density. Operating in synchronous mode, it has a max access time of 400 ns and operates b/w -40 to 125 °C. Ideal for automotive applications, this rectangular IN-LINE package offers reliable performance in various systems.

400 ns

R-PDIP-T8

e3

9.271 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

5.334 mm

3.6 V

2.7 V

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

47L16T-E/SN by Microchip Technology

47L16T-E/SN

Microchip Technology

47L16T-E/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 2KX8 organization. Operating at -40 to 125 °C, it has a memory density of 16384 bit and max access time of 400 ns. Ideal for automotive applications due to its small outline package style and CMOS technology.

400 ns

R-PDSO-G8

e3

4.9 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47L16T-E/ST by Microchip Technology

47L16T-E/ST

Microchip Technology

47L16T-E/ST by Microchip Technology is a CMOS memory IC with EEPROM+SRAM, operating in synchronous mode. It has an organization of 2KX8 and a memory density of 16384 bit. Ideal for automotive applications, it offers a wide temperature range from -40 to 125 °C and operates at supply voltages b/w 2.7V to 3.6V.

400 ns

R-PDSO-G8

e3

4.4 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47L16T-I/ST by Microchip Technology

47L16T-I/ST

Microchip Technology

47L16T-I/ST by Microchip Technology is a small outline memory IC with 2Kx8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is ideal for industrial applications requiring a memory density of 16384 bit, fast access time of 400 ns, and operating temperature range from -40 to 85°C.

400 ns

R-PDSO-G8

e3

4.4 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

SMC128AFB6E by STMicroelectronics

SMC128AFB6E

STMicroelectronics

SMC128AFB6E by STMicroelectronics is an industrial-grade, asynchronous memory IC with a density of 1 Gb and operates b/w -40 °C to 85 °C. It features a 128Mx8 organization and comes in a no-lead, uncasded chip package. Ideal for high-performance applications requiring reliable data storage.

X-XUUC-N

1073741824 bit

MEMORY CIRCUIT

8

1

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

SMC512AFB6E by STMicroelectronics

SMC512AFB6E

STMicroelectronics

SMC512AFB6E by STMicroelectronics is an industrial-grade, asynchronous memory IC with a density of 4 Gb and operates b/w -40 °C to 85 °C. It features a 512M x 8 organization in a no-lead package, ideal for space-constrained applications. This CMOS technology ensures reliable performance in various electronic devices.

X-XUUC-N

4294967296 bit

MEMORY CIRCUIT

8

1

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

MT29C1G12MAAIVAMD-5IT by Micron Technology

MT29C1G12MAAIVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

8

1

130

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C1G12MAAIYAMR-5AIT by Micron Technology

MT29C1G12MAAIYAMR-5AIT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B130;

LPDRAM IS ORGANISED AS 32M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

8

1

130

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C1G12MAAJVAMD-5IT by Micron Technology

MT29C1G12MAAJVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 8 mm;

IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

16

1

130

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C1G12MAAJYAMD-5IT by Micron Technology

MT29C1G12MAAJYAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

LPDRAM IS ORGANISED AS 32M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

16

1

130

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

THGBMGG9U4LBAIR by Toshiba

THGBMGG9U4LBAIR

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMGT0U8LBAIG by Toshiba

THGBMGT0U8LBAIG

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B153

1099511627776 bit

MEMORY CIRCUIT

8

1

153

137438953472 words

128G

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAIL by Toshiba

THGBMHG6C1LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAU6 by Toshiba

THGBMHG6C1LBAU6

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG7C1LBAIL by Toshiba

THGBMHG7C1LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG7C2LBAU7 by Toshiba

THGBMHG7C2LBAU7

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG8C2LBAIL by Toshiba

THGBMHG8C2LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 8;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG8C4LBAU7 by Toshiba

THGBMHG8C4LBAU7

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG9C4LBAIR by Toshiba

THGBMHG9C4LBAIR

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG9C8LBAU8 by Toshiba

THGBMHG9C8LBAU8

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHT0C8LBAIG by Toshiba

THGBMHT0C8LBAIG

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

1099511627776 bit

MEMORY CIRCUIT

8

1

153

137438953472 words

128G

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAWL by Toshiba

THGBMHG6C1LBAWL

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG7C2LBAWR by Toshiba

THGBMHG7C2LBAWR

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG8C4LBAWR by Toshiba

THGBMHG8C4LBAWR

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

THGBMHG9C8LBAWG by Toshiba

THGBMHG9C8LBAWG

Toshiba

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

ASYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

ST25TA512-AC6G5 by STMicroelectronics

ST25TA512-AC6G5

STMicroelectronics

ST25TA512-AC6G5 from STMicroelectronics is a CMOS memory IC designed for industrial applications, operating in asynchronous mode. It features a 512-bit density with a temperature range of -40 °C to 85 °C and comes in a no-lead rectangular package. Ideal for compact designs, it offers reliable performance in harsh environments.

R-XUUC-N

512 bit

MEMORY CIRCUIT

8

1

512 words

64

ASYNCHRONOUS

85 Cel

-40 Cel

64X8

DIE

DIE OR CHIP

RECTANGULAR

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UNSPECIFIED

M24SR04-GSG12I/2 by STMicroelectronics

M24SR04-GSG12I/2

STMicroelectronics

M24SR04-GSG12I/2 from STMicroelectronics is a synchronous memory IC with a 3.3V nominal voltage and operates in a no-lead, round package. It features 512x8 organization and offers a memory density of 4096 bits, ideal for compact applications. This CMOS technology ensures efficient performance in various electronic devices.

O-XUUC-N

4096 bit

MEMORY CIRCUIT

8

1

512 words

512

SYNCHRONOUS

512X8

UNSPECIFIED

DIE

WAFER

ROUND

UNCASED CHIP

NOT SPECIFIED

5.5 V

2.7 V

3.3

YES

CMOS

NO LEAD

UNSPECIFIED

NOT SPECIFIED

M24SR64-YDW8T/2 by STMicroelectronics

M24SR64-YDW8T/2

STMicroelectronics

M24SR64-YDW8T/2 by STMicroelectronics is a 64KX1 memory circuit with 65536 bit memory density. It operates in synchronous mode, has a supply voltage range of 2.7V to 5.5V, and industrial temperature grade. This small outline IC with dual terminals is ideal for applications requiring secure data storage and retrieval in compact devices.

R-PDSO-G8

4.3 mm

65536 bit

MEMORY CIRCUIT

1

1

8

65536 words

64K

SYNCHRONOUS

105 Cel

-40 Cel

64KX1

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

NOT SPECIFIED

1.2 mm

5.5 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

2.9 mm

M24SR64-YMN8T/2 by STMicroelectronics

M24SR64-YMN8T/2

STMicroelectronics

M24SR64-YMN8T/2 by STMicroelectronics is a 64Kx1 memory IC with CMOS technology. It operates in synchronous mode, has 65536-bit memory density, and supports a supply voltage range of 2.7V to 5.5V. This small outline package is ideal for industrial applications requiring reliable data storage and retrieval capabilities.

R-PDSO-G8

4.9 mm

65536 bit

MEMORY CIRCUIT

1

1

8

65536 words

64K

SYNCHRONOUS

105 Cel

-40 Cel

64KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.75 mm

5.5 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

M24SR64-YSG12I/2 by STMicroelectronics

M24SR64-YSG12I/2

STMicroelectronics

M24SR64-YSG12I/2 by STMicroelectronics is a synchronous memory IC with 8Kx8 organization and 65536-bit memory density. Operating at 3.3V, it is suitable for applications requiring uncased chip package style and CMOS technology. Ideal for surface mount setups, this rectangular-shaped IC supports a wide supply voltage range from 2.7V to 5.5V.

R-XUUC-N

65536 bit

MEMORY CIRCUIT

8

1

8192 words

8K

SYNCHRONOUS

8KX8

DIE

DIE OR CHIP

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

5.5 V

2.7 V

3.3

YES

CMOS

UNSPECIFIED

NOT SPECIFIED

M24SR02-YSG12I/2 by STMicroelectronics

M24SR02-YSG12I/2

STMicroelectronics

MEMORY CIRCUIT; Package Code: DIE; Package Shape: UNSPECIFIED; Organization: 2KX1; Terminal Form: NO LEAD; JESD-30 Code: X-XUUC-N;

X-XUUC-N

2048 bit

MEMORY CIRCUIT

1

1

2048 words

2K

SYNCHRONOUS

2KX1

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

5.5 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

ST25TB512-AC6G6 by STMicroelectronics

ST25TB512-AC6G6

STMicroelectronics

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; Package Code: DIE; Package Shape: UNSPECIFIED; Package Style (Meter): UNCASED CHIP; Surface Mount: YES;

X-XUUC-N

512 bit

MEMORY CIRCUIT

32

1

16 words

16

ASYNCHRONOUS

85 Cel

-40 Cel

16X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

2988146 by Phoenix Contact

2988146

Phoenix Contact

MEMORY CIRCUIT; Package Code: DIE; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; No. of Words Code: 512M; Surface Mount: YES;

R-XUUC-N

4294967296 bit

MEMORY CIRCUIT

8

1

536870912 words

512M

ASYNCHRONOUS

512MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

NO LEAD

UPPER

NOT SPECIFIED

MT43A4G40200NFA-S15:A by Micron Technology

MT43A4G40200NFA-S15:A

Micron Technology

Micron Technology's MT43A4G40200NFA-S15:A is a 4GX4 memory IC with 17179869184 bit density. Operating at 1.2V, it features synchronous mode and 896 terminals in a square GRID ARRAY package. Ideal for applications requiring high memory capacity and fast data processing in electronic devices.

IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE

S-PBGA-B896

31 mm

17179869184 bit

MEMORY CIRCUIT

4

1

896

4294967296 words

4G

SYNCHRONOUS

105 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

NOT SPECIFIED

4.2 mm

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

31 mm

MT29C2G24MAAAAHAMD-5IT by Micron Technology

MT29C2G24MAAAAHAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C2G24MAABAHAMD-5EIT by Micron Technology

MT29C2G24MAABAHAMD-5EIT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Additional Features: ALSO ORGANISED AS 64M X 16;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

8 mm

MT29C2G24MAABAHAMD-5IT by Micron Technology

MT29C2G24MAABAHAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

8 mm

MT29C2G24MAABAKAMD-5IT by Micron Technology

MT29C2G24MAABAKAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 32;

ALSO ORGANISED AS 64M X 16

R-PBGA-B130

9 mm

1073741824 bit

MEMORY CIRCUIT

32

1

130

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

8 mm

MT29C4G48MAZBAAKS-5WT by Micron Technology

MT29C4G48MAZBAAKS-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C4G96MAYBACKD-5WT by Micron Technology

MT29C4G96MAYBACKD-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C4G96MAZBACKD-5WT by Micron Technology

MT29C4G96MAZBACKD-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10.5 mm;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C8G96MAZBADKD-5IT by Micron Technology

MT29C8G96MAZBADKD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C8G96MAZBADKD-5WT by Micron Technology

MT29C8G96MAZBADKD-5WT

Micron Technology

MT29C8G96MAZBADKD-5WT by Micron Technology is a 64MX32 memory IC with 67108864 words and 2147483648 bit memory density. Operating at 1.7-1.95V, it has a synchronous mode and thin profile grid array package shape. Ideal for applications requiring high-speed data processing in compact electronic devices.

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C1G12MAACVAMD-5IT by Micron Technology

MT29C1G12MAACVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

NAND FLASH IS ORGANISED AS 64M X 16

R-PBGA-B130

e1

9 mm

536870912 bit

MEMORY CIRCUIT

32

1

130

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

8 mm

MT29C1G12MAACYAMD-5IT by Micron Technology

MT29C1G12MAACYAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

NAND FLASH IS ORGANISED AS 64M X 16

R-PBGA-B130

e1

9 mm

536870912 bit

MEMORY CIRCUIT

32

1

130

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

8 mm

MT29C1G12MAADVAMD-5IT by Micron Technology

MT29C1G12MAADVAMD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 130; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

NAND FLASH IS ORGANISED AS 64M X 16

R-PBGA-B130

e1

9 mm

536870912 bit

MEMORY CIRCUIT

32

1

130

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

8 mm