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ST25TA512-AC6G5

STMicroelectronics

ST25TA512-AC6G5 by STMicroelectronics

ST25TA512-AC6G5 from STMicroelectronics is a CMOS memory IC designed for industrial applications, operating in asynchronous mode. It features a 512-bit density with a temperature range of -40 °C to 85 °C and comes in a no-lead rectangular package. Ideal for compact designs, it offers reliable performance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,839 parts In-Stock

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5,839

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Digiode

USA . 3,009 parts In-Stock

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3,009

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Anansix

USA . 827 parts In-Stock

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827

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 682 parts In-Stock

1+ parts

$2.775

100+ parts

-

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$2.497

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682

$2.775

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$2.497

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MKK Technologies

India . 760 parts In-Stock

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$5.218

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760

$5.218

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DigiPath Technology Company

USA . 760 parts In-Stock

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$5.218

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760

$5.218

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AZTECH Wire

Italy . 97 parts In-Stock

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$8.750

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97

$8.750

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Parana Technologies

USA . 2,004 parts In-Stock

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$3.318

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2,004

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$3.318

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Corphita

USA . 229 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the ST25TA512-AC6G5 from STMicroelectronics, a leader in innovative memory solutions. This versatile memory IC excels in demanding industrial applications, delivering consistent data retention even in extreme temperatures. Its compact design ensures effortless integration into various systems, enhancing efficiency while reducing space requirements. Choose STMicroelectronics for unmatched quality and support, empowering your next project with cutting-edge technology that drives success.

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into various electronic assemblies, reducing space requirements and improving overall performance.

Package Shape: RECTANGULAR

The rectangular package shape optimizes layout and space efficiency on printed circuit boards (PCBs), making it ideal for compact designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures quick access to memory, making it suitable for applications requiring fast read and write operations.

Package Style (Meter): UNCASED CHIP

The uncased chip style facilitates direct mounting on PCBs, enhancing thermal performance and enabling custom packaging solutions.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this memory IC is versatile enough for various applications, including industrial environments that experience moderate heat.

Organization: 64X8

The 64x8 organization allows for efficient data handling and storage, making it suitable for a wide range of digital applications.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C makes this memory IC suitable for harsh environmental conditions, ensuring reliability in extreme temperatures.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature levels ensures consistent performance and longevity, suitable for demanding applications.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, making this memory IC efficient for battery-powered and performance-critical applications.

Terminal Form: NO LEAD

No lead terminals enhance reliability and reduce the risk of damage during handling and integration, leading to better durability in designs.

No. of Words: 512 words

With 512 words of storage capacity, this memory IC can handle a moderate amount of data, making it suitable for various applications requiring basic memory functionality.

Memory Width: 8

An 8-bit memory width allows for efficient data processing and serves as a good match for common microcontrollers and digital signal processors.

No. of Words Code: 64

Having 64 addresses enables effective memory organization, improving data retrieval efficiency for applications with small to medium-sized datasets.

Memory Density: 512 bit

A memory density of 512 bits indicates a compact design that effectively balances space and functionality, suitable for space-constrained applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is purpose-built for data storage and retrieval, ensuring optimized performance for electronic devices.

Technical Specifications

Other Function Memory ICs ST25TA512-AC6G5 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-XUUC-N

Memory Density:

512 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

512 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X8

Package Code:

DIE

Package Equivalence Code:

DIE OR CHIP

Package Shape:

Package Style (Meter):

UNCASED CHIP

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UNSPECIFIED

Trade Compliance

ST25TA512-AC6G5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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