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ST25DV04K-JFR6C3

STMicroelectronics

ST25DV04K-JFR6C3 by STMicroelectronics

ST25DV04K-JFR6C3 from STMicroelectronics is a CMOS memory IC with 4K words and operates at 1.8V to 5.5V, making it ideal for industrial applications. It features a compact 2mm x 3mm package and supports synchronous operation up to 85 °C. This versatile memory solution is perfect for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,263 parts In-Stock

1+ parts

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4,263

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Digiode

USA . 3,665 parts In-Stock

1+ parts

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3,665

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Anansix

USA . 2,169 parts In-Stock

1+ parts

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2,169

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 38 parts In-Stock

1+ parts

$3.751

100+ parts

-

1k+ parts

$3.376

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38

$3.751

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$3.376

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MKK Technologies

India . 2,000 parts In-Stock

1+ parts

$7.053

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2,000

$7.053

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DigiPath Technology Company

USA . 2,000 parts In-Stock

1+ parts

$7.053

100+ parts

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2,000

$7.053

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Corphita

USA . 4,101 parts In-Stock

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4,101

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Parana Technologies

USA . 76 parts In-Stock

1+ parts

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$4.485

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76

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$4.485

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Overview

Unlock the potential of your next project with the ST25DV04K-JFR6C3 from STMicroelectronics—where quality meets innovation! This advanced memory IC is engineered for reliability and efficiency, perfect for a myriad of applications in industrial and consumer electronics. With its compact design and robust performance across extreme temperatures, you can trust it to deliver unmatched value, ensuring your designs are both cutting-edge and dependable. Elevate your solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the IC suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design and ease of integration into modern electronic circuits, saving space on the PCB.

Package Shape: RECTANGULAR

A rectangular package shape allows for efficient space utilization on circuit boards, making it versatile for different layouts.

Operating Mode: SYNCHRONOUS

Synchronous operation improves performance by aligning data transfer to clock cycles, resulting in faster access times.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3 V is industry standard, ensuring compatibility with a wide range of devices.

No. of Terminals: 8

With 8 terminals, the IC provides sufficient connectivity for various applications while maintaining a compact form factor.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

A small outline with a heat sink option allows for effective thermal management while maintaining a thin profile for space-constrained designs.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliable performance even in moderately harsh environments.

Organization: 4KX1

The 4Kx1 organization allows for efficient data storage tailored to specific applications that require low-density memory.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C makes this IC ideal for industrial and automotive applications needing resilience to extreme cold.

Terminal Position: DUAL

Dual terminal positioning enhances connectivity options and facilitates easier soldering and mounting on PCB.

Maximum Seated Height: 0.6 mm

A low seated height of 0.6 mm allows for a very flat profile, contributing to the overall compactness of electronic assemblies.

Width: 2 mm

The narrow width of 2 mm helps in fitting the component into tight spaces, making it suitable for compact device designs.

Minimum Supply Voltage (Vsup): 1.8 V

A minimum supply voltage of 1.8 V allows for flexibility in power supply configurations and can help reduce overall power consumption.

Length: 3 mm

A length of 3 mm further contributes to the compact nature of the IC, making it suitable for space-limited applications.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature environments, this IC can be relied upon in demanding applications that face extreme conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this IC energy-efficient and reliable.

Terminal Form: NO LEAD

The no-lead terminal form allows for a more compact layout while also facilitating better heat dissipation.

No. of Words: 4096 words

With 4096 words of storage, the IC provides sufficient memory for various applications without unnecessary complexity.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm enables high-density component placement on the PCB, maximizing design efficiency.

No. of Words Code: 4K

The 4K words code is ideal for applications requiring moderate memory, ensuring balance between capacity and performance.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V provides additional flexibility for integration with different power supplies.

Memory Density: 4096 bit

The memory density of 4096 bits caters well to embedded systems that require efficient data storage without excess overhead.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is designed for fast and effective data storage and retrieval in electronic applications.

Technical Specifications

Other Function Memory ICs ST25DV04K-JFR6C3 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

ST25DV04K-JFR6C3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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