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ST25DV16K-IER6C3

STMicroelectronics

ST25DV16K-IER6C3 by STMicroelectronics

ST25DV16K-IER6C3 from STMicroelectronics is a CMOS memory IC with 16K words and operates at a nominal voltage of 3.3V. It features a compact, dual-terminal design suitable for industrial applications, functioning in temperatures from -40 °C to 85 °C. This surface-mount device ensures efficient synchronous operation in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,766 parts In-Stock

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Digiode

USA . 4,708 parts In-Stock

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Anansix

USA . 382 parts In-Stock

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382

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IDEA Electronic Components Group

UK . 415 parts In-Stock

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$3.481

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$3.133

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MKK Technologies

India . 712 parts In-Stock

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$6.546

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DigiPath Technology Company

USA . 712 parts In-Stock

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$6.546

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712

$6.546

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Parana Technologies

USA . 1,561 parts In-Stock

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$4.162

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Corphita

USA . 664 parts In-Stock

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Overview

Unlock the potential of your next project with the ST25DV16K-IER6C3 from STMicroelectronics. Renowned for excellence, STMicroelectronics delivers reliable memory solutions that enhance performance and efficiency across various applications, from industrial automation to smart devices. This compact memory IC ensures seamless data management in demanding environments, providing durability and flexibility, while also reducing power consumption. Elevate your designs with a trusted partner in innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface mount technology allows for compact designs and easy integration into modern circuit boards, enhancing space efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, facilitating better layout and connectivity options.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances speed and efficiency, making the IC suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V is standard for many digital circuits, offering compatibility with a wide range of applications.

No. of Terminals: 8

With 8 terminals, the IC allows for a simplified connection to other components, easing the design process.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline and thin profile make it ideal for applications where space is a premium, enabling compact designs.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliable performance in challenging environments.

Organization: 16KX1

The 16KX1 organization provides a balance of memory capacity and access speed, suitable for various industrial needs.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this IC to be used in extreme conditions, making it versatile.

Terminal Position: DUAL

Dual terminal positioning enhances connectivity and compatibility with various PCB designs.

Maximum Seated Height: 0.6 mm

A maximum height of 0.6 mm enables it to fit into ultra-thin designs, maintaining low profiles in devices.

Width: 2 mm

A compact width of 2 mm contributes to space-saving in applications where PCB real estate is critical.

Minimum Supply Voltage (Vsup): 1.8 V

The capability to operate down to 1.8V enhances compatibility with low-power systems and battery-operated devices.

Length: 3 mm

The 3 mm length allows for a small footprint, making it more adaptable for diverse circuit layouts.

Temperature Grade: INDUSTRIAL

An industrial temperature grade ensures reliability and performance in demanding environments over an extended period.

Technology: CMOS

CMOS technology offers low power consumption, which is crucial for battery-powered applications and enhances overall efficiency.

Terminal Form: NO LEAD

Leadless design helps in reducing the footprint and allows for more precise placement on the PCB, enhancing performance.

No. of Words: 16384 words

A substantial number of words ensures ample memory capacity for data storage applications in various industries.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm supports denser packing of components on PCBs, optimizing space without sacrificing performance.

No. of Words Code: 16K

The 16K words code indicates sufficient capacity for many applications, meeting the needs of various industrial uses.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to handle a maximum supply voltage of 5.5V allows for flexibility in design and compatibility with various systems.

Memory Density: 16384 bit

A memory density of 16384 bits provides efficient data storage capability, making it a practical choice for memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is engineered for reliable data storage and retrieval, crucial in digital applications.

Technical Specifications

Other Function Memory ICs ST25DV16K-IER6C3 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

ST25DV16K-IER6C3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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