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M36W108T100ZM6

STMicroelectronics

M36W108T100ZM6 by STMicroelectronics

M36W108T100ZM6 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 1M x 8 organization with mixed FLASH+SRAM technology. It operates b/w -40 °C to 85°C and supports power supplies of 2.7V to 3.6V, ideal for industrial applications. With a max access time of 100 ns and compact design, it ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,745 parts In-Stock

1+ parts

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2,745

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Anansix

USA . 1,062 parts In-Stock

1+ parts

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1,062

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Vyrian

USA . 323 parts In-Stock

1+ parts

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323

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,243 parts In-Stock

1+ parts

$3.455

100+ parts

-

1k+ parts

$3.109

10k+ parts

-

2,243

$3.455

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$3.109

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MKK Technologies

India . 2,134 parts In-Stock

1+ parts

$6.496

100+ parts

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10k+ parts

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2,134

$6.496

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DigiPath Technology Company

USA . 2,134 parts In-Stock

1+ parts

$6.496

100+ parts

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10k+ parts

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2,134

$6.496

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Parana Technologies

USA . 1,067 parts In-Stock

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100+ parts

$4.130

1k+ parts

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1,067

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$4.130

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Corphita

USA . 731 parts In-Stock

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731

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Overview

Unlock the power of innovation with the M36W108T100ZM6 from STMicroelectronics—a trusted leader in the semiconductor industry. This cutting-edge memory IC seamlessly blends FLASH and SRAM technologies, making it ideal for diverse applications like automotive, industrial automation, and consumer electronics. Enjoy unparalleled reliability and efficiency with its robust design, ensuring optimal performance even in extreme conditions. Elevate your projects with a solution that delivers exceptional value and unmatched quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance against physical damage, making the product suitable for robust applications.

Surface Mount: YES

Surface mount technology enables compact design and efficient assembly, saving space on printed circuit boards (PCBs).

Package Shape: RECTANGULAR

A rectangular shape allows for organized layout and efficient use of PCB real estate.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility and faster data retrieval without the need for a clock signal.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers both non-volatile and volatile memory benefits, enabling fast data access along with data retention.

Power Supplies (V): 3/3.3

Dual power supply options provide versatility for integration in various electronic designs needing different voltage levels.

No. of Terminals: 48

A high number of terminals allows for increased connectivity, accommodating more data pathways for improved functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low-profile grid array design minimizes height on the PCB, making it ideal for compact devices that require low-profile components.

Maximum Operating Temperature: 85 °C

An operational temperature up to 85 °C makes this IC suitable for industrial applications where heat management is critical.

Organization: 1MX8

The 1MX8 organization means data is structured efficiently, offering an effective memory allocation for various applications.

Minimum Operating Temperature: -40 °C

The capability to operate at -40 °C ensures reliability in extreme conditions, making it ideal for harsh environments.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent solderability and ensures long-term reliability for electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better thermal management and space efficiency when mounted on PCBs.

Maximum Seated Height: 1.35 mm

The low seated height allows for compatibility with compact designs, optimizing space utilization in electronic devices.

Width: 9.8 mm

A compact width contributes to layout flexibility on PCBs, facilitating varied design applications.

Minimum Supply Voltage (Vsup): 2.7 V

The ability to operate at a low minimum supply voltage enhances energy efficiency, making it ideal for portable applications.

Length: 11.8 mm

With an optimal length, it can be efficiently accommodated in compact electronic assemblies.

Temperature Grade: INDUSTRIAL

Industrial-grade specifications ensure higher reliability and longevity in demanding applications.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, critical for modern electronic devices.

Terminal Form: BALL

Ball terminal form facilitates easier mounting and ensures reliable connections in a compact layout.

Maximum Supply Current: 100 mA

Moderate supply current needs allow for efficient power distribution in designs, ensuring system stability.

No. of Words: 1048576 words

With over a million addressable words, it provides substantial memory capacity for a range of applications.

Memory Width: 8

An 8-bit memory width facilitates efficient data handling for many applications, supporting rapid access to information.

Terminal Pitch: 1 mm

A 1 mm terminal pitch allows for denser arrangements on PCBs, maximizing available space without sacrificing performance.

No. of Words Code: 1M

The specification of 1M words indicates a solid memory capacity suitable for a range of advanced applications.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V ensures compatibility with a wide range of electronic systems requiring standard voltage levels.

Memory Density: 8388608 bit

High memory density allows for comprehensive data storage and efficient processing in compact applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory IC, it is optimized for efficient data storage and retrieval, essential for modern electronic applications.

Maximum Standby Current: 0.00002 Amp

Extremely low standby current enhances energy efficiency, making this IC suitable for power-sensitive applications.

Maximum Access Time: 100 ns

A maximum access time of 100 ns ensures quick data retrieval, meeting the demands of high-speed processing applications.

Technical Specifications

Other Function Memory ICs M36W108T100ZM6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZM6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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