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M36W216B85ZA1T

STMicroelectronics

M36W216B85ZA1T by STMicroelectronics

M36W216B85ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -40 °C to 70 °C, making it ideal for commercial applications in compact electronics. Its grid array design ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,010 parts In-Stock

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3,010

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Anansix

USA . 2,580 parts In-Stock

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2,580

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Vyrian

USA . 1,519 parts In-Stock

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1,519

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,410 parts In-Stock

1+ parts

$2.173

100+ parts

-

1k+ parts

$1.956

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1,410

$2.173

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$1.956

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MKK Technologies

India . 1,209 parts In-Stock

1+ parts

$4.086

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1,209

$4.086

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DigiPath Technology Company

USA . 1,209 parts In-Stock

1+ parts

$4.086

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1,209

$4.086

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Corphita

USA . 4,427 parts In-Stock

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4,427

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Parana Technologies

USA . 142 parts In-Stock

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$2.598

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142

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$2.598

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Overview

Unlock the potential of your designs with the M36W216B85ZA1T from STMicroelectronics, a leader in innovative memory solutions. This high-performance memory IC combines exceptional quality and reliability, perfect for a range of applications from consumer electronics to automotive systems. With its low-profile, surface-mount design, it optimizes space while delivering efficient performance. Experience enhanced functionality and seamless integration, making your projects smarter and more efficient!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures good protection against environmental factors and enhances reliability.

Surface Mount: YES

The surface mount design allows for efficient use of PCB space and facilitates automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for compact designs, allowing for higher density layout on the circuit board.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers faster access times and simplified interfacing with other components.

Nominal Supply Voltage / Vsup (V): 3

A 3V nominal supply voltage is compatible with a wide range of modern digital circuits, making it versatile for various applications.

No. of Terminals: 66

With 66 terminals, this IC supports a comprehensive set of functionalities and connections, accommodating complex designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch grid array design enables higher component density and improved electrical performance.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in various environments without overheating.

Organization: 1MX16

The 1MX16 organization offers a structured memory layout that facilitates efficient data storage and retrieval.

Minimum Operating Temperature: 0 °C

The ability to operate from 0 °C allows this memory IC to be suitable for a broad range of commercial applications.

Terminal Position: BOTTOM

Bottom terminal positioning aids in space optimization on PCBs, essential for compact electronic designs.

Maximum Seated Height: 1.4 mm

The low seated height ensures that the component is unobtrusive on the PCB, allowing for better overall design aesthetics.

Width: 8 mm

An 8 mm width is manageable for various design applications while ensuring ample surface area for heat dissipation.

Minimum Supply Voltage (Vsup): 2.7 V

The ability to function with a minimum supply voltage of 2.7V provides flexibility in power supply options.

Length: 12 mm

A compact 12 mm length makes integration into space-constrained designs more feasible and efficient.

Temperature Grade: COMMERCIAL

Rated for commercial temperature ranges, this product is designed for reliable performance in non-industrial settings.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this memory IC suitable for energy-efficient designs.

Terminal Form: BALL

Ball terminal form allows for easy mounting on PCBs, enhancing soldering reliability and reducing mechanical stress.

No. of Words: 1048576 words

With over a million words of storage capacity, this IC supports substantial data handling for a variety of applications.

Memory Width: 16

A 16-bit memory width allows for efficient data transfers and processing, enhancing overall system performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch facilitates higher density PCB design, which is ideal for modern compact electronic systems.

No. of Words Code: 1M

The 1M word code signifies the IC's capability to store significant amounts of data, making it suitable for memory-intensive applications.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V provides operational flexibility within standard logic levels in many electronic systems.

Memory Density: 16777216 bit

With a memory density of 16 Megabits, this IC is efficient for applications requiring substantial memory capacity in a small form factor.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for data storage, making it an essential component for memory-critical applications.

Technical Specifications

Other Function Memory ICs M36W216B85ZA1T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B85ZA1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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