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Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.

Other Function Memory ICs

Available Parts 213

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Screening Level Maximum Seated Height Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Type Width Write Protection
MR0A08BYS35 by Everspin Technologies

MR0A08BYS35

Everspin Technologies

MR0A08BYS35 by Everspin: 128KX8 memory IC with 3.3V supply, 35ns access time, and 1048576 bit density. Ideal for commercial applications requiring fast asynchronous operation in a small outline package.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

DSM2180F3-90T6 by STMicroelectronics

DSM2180F3-90T6

STMicroelectronics

DSM2180F3-90T6 from STMicroelectronics is a 128Kx8 asynchronous memory IC with a supply voltage range of 4.5V to 5.5V. It features a compact flatpack design and operates in industrial temperatures from -40 °C to 85°C. Ideal for various electronic applications, it ensures reliable performance in demanding environments.

S-PQFP-G52

e4

10 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2180F3V-15K6 by STMicroelectronics

DSM2180F3V-15K6

STMicroelectronics

DSM2180F3V-15K6 by STMicroelectronics is a 128Kx8 asynchronous memory IC designed for industrial applications. It operates at a nominal voltage of 3.3V, with a temperature range of -40 °C to 85°C. This surface-mount chip carrier features a compact square design and offers high-density storage in a robust package.

S-PQCC-J52

e3

19.1262 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

DSM2180F3V-15T6 by STMicroelectronics

DSM2180F3V-15T6

STMicroelectronics

DSM2180F3V-15T6 from STMicroelectronics is a 128Kx8 CMOS memory IC designed for industrial applications. It operates asynchronously with a supply voltage range of 3-3.6V and features a compact flatpack design. With a max temp of 85 °C, it ensures reliability in demanding environments.

S-PQFP-G52

e4

10 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2190F4V-15K6 by STMicroelectronics

DSM2190F4V-15K6

STMicroelectronics

DSM2190F4V-15K6 by STMicroelectronics is a 256Kx8 asynchronous memory IC designed for industrial applications. It operates at a nominal voltage of 3.3V, with a temperature range from -40 °C to 85°C. This surface-mount chip carrier features a compact square design and offers high-density storage in various electronic devices.

ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY

S-PQCC-J52

e3

19.1262 mm

2097152 bit

MEMORY CIRCUIT

8

1

52

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

DSM2190F4V-15T6 by STMicroelectronics

DSM2190F4V-15T6

STMicroelectronics

DSM2190F4V-15T6 by STMicroelectronics is a 256Kx8 asynchronous memory IC with a supply voltage range of 3.0-3.6V. It features a compact flatpack design, operates in industrial temperatures (-40 °C to 85°C), and supports surface mount applications. Ideal for various electronic devices requiring reliable memory solutions.

ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY

S-PQFP-G52

e4

10 mm

2097152 bit

MEMORY CIRCUIT

8

1

52

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2150F5V-12T6 by STMicroelectronics

DSM2150F5V-12T6

STMicroelectronics

DSM2150F5V-12T6 by STMicroelectronics is a 256Kx16 asynchronous memory IC with a supply voltage range of 3.0-3.6V, ideal for industrial applications. It features a compact flatpack design and operates in temperatures from -40 °C to 85°C. This CMOS device supports surface mount technology with a fine pitch terminal layout.

ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY

S-PQFP-G80

e3/e4

12 mm

4194304 bit

MEMORY CIRCUIT

16

1

80

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TFQFP

SQUARE

FLATPACK, THIN PROFILE, FINE PITCH

NOT SPECIFIED

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.5 mm

QUAD

NOT SPECIFIED

12 mm

XCCACEM16BG388I by Xilinx

XCCACEM16BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; Parallel or Serial: SERIAL;

20

1000000 Write/Erase Cycles

S-PBGA-B388

35 mm

16777216 bit

MEMORY CIRCUIT

16

1

1

388

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

XCCACEM32BG388I by Xilinx

XCCACEM32BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

20

1000000 Write/Erase Cycles

S-PBGA-B388

e0

35 mm

33554432 bit

MEMORY CIRCUIT

16

1

1

388

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

XCCACEM64BG388I by Xilinx

XCCACEM64BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; JESD-609 Code: e0;

133 MHz

1000000 Write/Erase Cycles

S-PBGA-B388

e0

35 mm

67108864 bit

MEMORY CIRCUIT

16

1

388

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

M36DR432AD10ZA6T by STMicroelectronics

M36DR432AD10ZA6T

STMicroelectronics

M36DR432AD10ZA6T by STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M words of mixed FLASH+SRAM with a supply voltage range of 1.65-2.2V. It operates in extreme temperatures from -40 °C to 85 °C and supports surface mount applications. Ideal for industrial use, it offers fast access times up to 100 ns and minimal standby current.

100 ns

SRAM IS ORGANIZED AS 256K X 16

R-PBGA-B66

e0

12 mm

33554432 bit

MEMORY CIRCUIT

16

FLASH+SRAM

1

66

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA66,8X12,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.8/2

Not Qualified

1.4 mm

.00001 Amp

Other Memory ICs

26 mA

2.2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

8 mm

AT88SC0104C-SU by Atmel

AT88SC0104C-SU

Atmel

AT88SC0104C-SU by Atmel is a 1Kx1 memory circuit IC with 1024-bit memory density. It operates at 3.3V, has I2C control byte 1011CCCC, and supports software write protection. This small outline package IC is ideal for industrial applications requiring secure data storage and retrieval.

10

100000 Write/Erase Cycles

1011CCCC

R-PDSO-G8

e3

4.925 mm

1024 bit

MEMORY CIRCUIT

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.0001 Amp

EEPROMs

5 mA

5.5 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

SOFTWARE

XC17S10VOG8C by Xilinx

XC17S10VOG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

10 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

95008 bit

MEMORY CIRCUIT

1

3

1

8

95008 words

95008

SYNCHRONOUS

70 Cel

0 Cel

95008X1

3-STATE

PLASTIC/EPOXY

TSOP2

DIP8,.3

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10XLVOG8C by Xilinx

XC17S10XLVOG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

10 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

DIP8,.3

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10XLVOG8I by Xilinx

XC17S10XLVOG8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-609 Code: e3;

10 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

DIP8,.3

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20XLVOG8C by Xilinx

XC17S20XLVOG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 179160 words;

10 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

179160 bit

MEMORY CIRCUIT

1

3

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30XLVOG8C by Xilinx

XC17S30XLVOG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

10 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

249168 bit

MEMORY CIRCUIT

1

3

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

DLPR100DWC by Texas Instruments

DLPR100DWC

Texas Instruments

DLPR100DWC by Texas Instruments is a memory circuit IC with 2MX8 organization, 8-bit memory width, and 16777216 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max standby current of 0.00005 Amp. Ideal for industrial applications requiring small outline package style and surface mount compatibility.

R-PDSO-G8

16777216 bit

MEMORY CIRCUIT

8

3

8

2097152 words

2M

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

2.5/3.3

Not Qualified

.00005 Amp

OTP ROMs

YES

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

XC17S10XLPDG8C by Xilinx

XC17S10XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

TSOP8,.25

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPDG8C by Xilinx

XC17S30XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPDG8C by Xilinx

XC17S40XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

MR2A08AMYS35R by Everspin Technologies

MR2A08AMYS35R

Everspin Technologies

Everspin Technologies' MR2A08AMYS35R is a 256Kx8 memory IC with 2097152 bit density. Operating at 3.3V, it has a max access time of 35ns and AEC-Q100 screening level for automotive applications. This small outline, thin profile package is ideal for asynchronous operations in automotive electronics with a temperature range from -40 to 125°C.

35 ns

R-PDSO-G44

18.41 mm

2097152 bit

MEMORY CIRCUIT

8

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

AEC-Q100

1.2 mm

.02 Amp

SRAMs

135 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR2A08AMYS35 by Everspin Technologies

MR2A08AMYS35

Everspin Technologies

MR2A08AMYS35 by Everspin Technologies is a 256Kx8 memory IC with CMOS technology. It operates at 3.3V, has a max access time of 35ns, and is AEC-Q100 screened for automotive applications. With a small outline package style and gull wing terminal form, it is suitable for various memory circuit needs in automotive electronics.

35 ns

R-PDSO-G44

18.41 mm

2097152 bit

MEMORY CIRCUIT

8

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

AEC-Q100

1.2 mm

.02 Amp

SRAMs

135 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

CY8C24033-24PVXI by Cypress Semiconductor

CY8C24033-24PVXI

Cypress Semiconductor

CY8C24033-24PVXI by Cypress: 8KX1 memory circuit with 8192-bit density. Operates synchronously, industrial grade, -40 to 85°C range. Ideal for applications requiring small outline, shrink pitch package and CMOS technology.

R-PDSO-G56

18.415 mm

8192 bit

MEMORY CIRCUIT

1

1

56

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX1

PLASTIC/EPOXY

SSOP

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

Not Qualified

2.794 mm

5.25 V

3 V

YES

CMOS

INDUSTRIAL

GULL WING

.635 mm

DUAL

7.5057 mm

MT29C4G48MAZAPAKQ-5IT by Micron Technology

MT29C4G48MAZAPAKQ-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; JESD-609 Code: e1;

S-PBGA-B168

e1

12 mm

2097152 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

.75 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT29C2G48MAKLCJI-6IT by Micron Technology

MT29C2G48MAKLCJI-6IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm;

S-PBGA-B168

e1

12 mm

2097152 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

1.1 mm

Other Memory ICs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT29C4G96MAZBBCJV-48IT by Micron Technology

MT29C4G96MAZBBCJV-48IT

Micron Technology

MEMORY CIRCUIT; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Package Body Material: PLASTIC/EPOXY;

IT IS ALSO HAVING 4GBIT (X 32) LPDDR

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+LPDDR

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT29C4G48MAZBBAKB-48IT by Micron Technology

MT29C4G48MAZBBAKB-48IT

Micron Technology

Micron Technology's MT29C4G48MAZBBAKB-48IT is a 256MX16 FLASH+LPDDR memory IC with 4294967296 bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with limited space and power constraints.

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+LPDDR

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C8G96MAZBBDJV-48IT by Micron Technology

MT29C8G96MAZBBDJV-48IT

Micron Technology

MEMORY CIRCUIT; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Additional Features: IT IS ALSO HAVING 4GBIT (X 32) LPDDR;

IT IS ALSO HAVING 4GBIT (X 32) LPDDR

S-PBGA-B168

12 mm

8589934592 bit

MEMORY CIRCUIT

16

FLASH+LPDDR

1

168

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

M39L0R8090U3ZE6E by Micron Technology

M39L0R8090U3ZE6E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 133; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

S-PBGA-B133

8 mm

536870912 bit

MEMORY CIRCUIT

16

1

133

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

8 mm

MR10Q010CMB by Everspin Technologies

MR10Q010CMB

Everspin Technologies

MR10Q010CMB by Everspin Technologies is a 128Kx8 memory IC with CMOS technology. Operating at 3.3V, it offers synchronous operation and industrial temperature grade suitability. With a package style of grid array and low profile, it is ideal for applications requiring high-speed data storage in compact spaces.

R-PBGA-B24

8 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

24

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

1.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

ST25TA02K-AC6B5 by STMicroelectronics

ST25TA02K-AC6B5

STMicroelectronics

ST25TA02K-AC6B5 from STMicroelectronics is a CMOS memory IC designed for industrial applications, featuring a 256x8 organization and operating in asynchronous mode. It supports a wide temperature range from -40 °C to 85 °C. This unencased chip is ideal for compact designs requiring reliable data storage.

X-XUUC-N

2048 bit

MEMORY CIRCUIT

8

1

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TA02KD-C6C5 by STMicroelectronics

ST25TA02KD-C6C5

STMicroelectronics

ST25TA02KD-C6C5 from STMicroelectronics is a compact, dual-terminal memory IC with an industrial temperature range of -40 °C to 85 °C. It features asynchronous operation, 256x8 organization, and a very thin profile (0.6mm height). Ideal for space-constrained applications in various electronic devices.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

ST25TA02KD-C6H5 by STMicroelectronics

ST25TA02KD-C6H5

STMicroelectronics

ST25TA02KD-C6H5 from STMicroelectronics is a CMOS memory IC with 256x8 organization, operating b/w -40 °C to 85 °C. It features a compact chip carrier design and asynchronous mode for efficient data access. Ideal for industrial applications requiring reliable non-volatile storage.

R-PDSO-N5

1.7 mm

2048 bit

MEMORY CIRCUIT

8

1

5

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

BCC

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.4 mm

BOTTOM

NOT SPECIFIED

1.4 mm

ST25TA16K-AB6B3 by STMicroelectronics

ST25TA16K-AB6B3

STMicroelectronics

ST25TA16K-AB6B3 from STMicroelectronics is an industrial-grade CMOS memory IC with a density of 65536 bits and operates asynchronously. It features a wide temperature range from -40 °C to 85 °C, making it ideal for harsh environments. This surface-mount chip offers 8192 words organized in 8Kx8 format for versatile applications.

X-XUUC-N

65536 bit

MEMORY CIRCUIT

8

1

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TA512-AC6B5 by STMicroelectronics

ST25TA512-AC6B5

STMicroelectronics

ST25TA512-AC6B5 from STMicroelectronics is a CMOS memory IC with a density of 512 bits, organized as 64x8. It operates asynchronously and supports temperatures from -40 °C to 85 °C. Ideal for industrial applications, it features a no-lead design for efficient surface mounting.

X-XUUC-N

512 bit

MEMORY CIRCUIT

8

1

64 words

64

ASYNCHRONOUS

85 Cel

-40 Cel

64X8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TA64K-AB6B3 by STMicroelectronics

ST25TA64K-AB6B3

STMicroelectronics

ST25TA64K-AB6B3 from STMicroelectronics is an industrial-grade memory IC with a density of 65536 bits and operates asynchronously. It features a wide temperature range from -40 °C to 85 °C, making it ideal for harsh environments. This surface-mount chip is perfect for applications requiring reliable data storage in compact designs.

X-XUUC-N

65536 bit

MEMORY CIRCUIT

8

1

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TA02KP-C6C5 by STMicroelectronics

ST25TA02KP-C6C5

STMicroelectronics

ST25TA02KP-C6C5 from STMicroelectronics is a compact, dual-terminal memory IC with a 256x8 organization and operates asynchronously. It features an industrial temperature range of -40 °C to 85 °C and comes in a very thin profile package. Ideal for space-constrained applications requiring reliable data storage.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

MT29C4G48MAYBBAHK-48AIT by Micron Technology

MT29C4G48MAYBBAHK-48AIT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 137; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B137;

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

R-PBGA-B137

e1

13 mm

4294967296 bit

MEMORY CIRCUIT

8

1

137

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10.5 mm

ST25TA02K-AC6G5 by STMicroelectronics

ST25TA02K-AC6G5

STMicroelectronics

ST25TA02K-AC6G5 from STMicroelectronics is a CMOS memory IC designed for industrial applications, featuring a 256x8 organization and operating temperatures from -40 °C to 85 °C. Its asynchronous mode ensures efficient data access. Ideal for compact, surface-mount designs.

O-XUUC-N

2048 bit

MEMORY CIRCUIT

8

1

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

UNSPECIFIED

DIE

ROUND

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TA02KP-C6G5 by STMicroelectronics

ST25TA02KP-C6G5

STMicroelectronics

ST25TA02KP-C6G5 from STMicroelectronics is a CMOS memory IC with 256K x 8 organization, operating b/w -40 °C to 85 °C. This surface-mount chip features asynchronous operation and no lead terminals, ideal for industrial applications requiring reliable data storage.

O-XUUC-N

2097152 bit

MEMORY CIRCUIT

8

1

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

UNSPECIFIED

DIE

ROUND

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

ST25TA16KAB6G3 by STMicroelectronics

ST25TA16KAB6G3

STMicroelectronics

ST25TA16KAB6G3 from STMicroelectronics is an industrial-grade memory IC with a density of 65536 bits and operates asynchronously. It features a wide temperature range from -40 °C to 85 °C, making it ideal for harsh environments. This surface-mount, no-lead chip is perfect for various applications in electronics.

O-XUUC-N

65536 bit

MEMORY CIRCUIT

8

1

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIE

ROUND

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

ST25TA64K-AB6G3 by STMicroelectronics

ST25TA64K-AB6G3

STMicroelectronics

ST25TA64K-AB6G3 from STMicroelectronics is a CMOS memory IC with 8K x 8 organization, operating b/w -40 °C to 85 °C. This surface-mount, no-lead chip is ideal for industrial applications requiring reliable asynchronous data storage. With a density of 65536 bits, it ensures efficient performance in compact designs.

O-XUUC-N

65536 bit

MEMORY CIRCUIT

8

1

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIE

ROUND

UNCASED CHIP

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

47C04-E/SN by Microchip Technology

47C04-E/SN

Microchip Technology

47C04-E/SN by Microchip Technology is a small outline memory IC with 512x8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. Ideal for automotive applications, it has a supply voltage range of 4.5V to 5.5V and operates in temperatures from -40°C to 125°C.

400 ns

R-PDSO-G8

e3

4.9 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47C04-E/ST by Microchip Technology

47C04-E/ST

Microchip Technology

47C04-E/ST by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a memory density of 4096 bit and max access time of 400ns. Ideal for automotive applications due to its small outline, thin profile package style and wide temperature range from -40°C to 125°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C04-I/ST by Microchip Technology

47C04-I/ST

Microchip Technology

47C04-I/ST by Microchip Technology is a CMOS memory IC with EEPROM+SRAM, 512X8 organization, and 4096-bit memory density. It operates synchronously at temperatures ranging from -40 to 85°C. This small outline package with 0.65mm terminal pitch is ideal for industrial applications requiring fast access times.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C04T-E/SN by Microchip Technology

47C04T-E/SN

Microchip Technology

47C04T-E/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a max access time of 400ns and is suitable for automotive applications due to its temperature grade.

400 ns

R-PDSO-G8

e3

4.9 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47C04T-E/ST by Microchip Technology

47C04T-E/ST

Microchip Technology

47C04T-E/ST by Microchip Technology is a small outline, thin profile EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a max access time of 400ns and is suitable for automotive applications due to its temperature grade of -40 to 125°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm