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MT29C4G48MAZBBAKB-48IT

Micron Technology

MT29C4G48MAZBBAKB-48IT by Micron Technology

Micron Technology's MT29C4G48MAZBBAKB-48IT is a 256MX16 FLASH+LPDDR memory IC with 4294967296 bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with limited space and power constraints.

Median Price

$16.246

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 612 parts In-Stock

1+ parts

$16.246

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612

$16.246

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Verical

USA . 612 parts In-Stock

1+ parts

$16.246

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612

$16.246

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 255 parts In-Stock

1+ parts

$10.000

100+ parts

-

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255

$10.000

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DF Sales Co.

USA . 255 parts In-Stock

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$10.000

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255

$10.000

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Digiode

USA . 176 parts In-Stock

1+ parts

$15.434

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176

$15.434

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Vyrian

USA . 7,388 parts In-Stock

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7,388

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HZD GmbH

Germany . 4,500 parts In-Stock

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4,500

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PC Components Company LLC

USA . 492 parts In-Stock

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492

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Bristol Electronics

USA . 453 parts In-Stock

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453

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Martec Srl

Italy . 234 parts In-Stock

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Chip Stock

USA . 163 parts In-Stock

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Classic Components Corporation

USA . 149 parts In-Stock

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Semi Source

USA . 123 parts In-Stock

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Carlin Systems, Inc.

USA . 17 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Prism Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,745 parts In-Stock

1+ parts

$13.810

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1,745

$13.810

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Corphita

USA . 212 parts In-Stock

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$14.621

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212

$14.621

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AZTECH Wire

Italy . 797 parts In-Stock

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$16.750

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797

$16.750

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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2,240

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GreenTree Electronics

Israel . 865 parts In-Stock

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865

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of cutting-edge technology with Micron Technology's MT29C4G48MAZBBAKB-48IT. This high-quality memory IC offers unparalleled value and benefits, providing seamless performance in a variety of applications. With a focus on innovation and reliability, Micron Technology ensures that customers receive top-of-the-line products that exceed expectations. Experience the advantages of this flash and LPDDR mixed memory type, operating in synchronous mode for optimal efficiency. Upgrade your devices with Micron Technology and discover the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and resistant to damage.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time during assembly.

Operating Mode: SYNCHRONOUS

Enables data to be transferred in sync with the system clock, optimizing performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a standard voltage, ensuring compatibility with various systems.

Organization: 256MX16

Offers a high memory capacity with a wide data width, suitable for handling large amounts of information simultaneously.

Technical Specifications

Other Function Memory ICs MT29C4G48MAZBBAKB-48IT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

Additional Features:

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

JESD-30 Code:

S-PBGA-B168

Length:

12 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+LPDDR

No. of Functions:

1

No. of Terminals:

168

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA168,23X23,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

MT29C4G48MAZBBAKB-48IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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